硅三极管电子辐照的残余电压效应

摘要

The total ionizing dose effect of high energy (1. 5 MeV) electron irradiation on the DC characteristic of Si bipolar junction transistor (BJT) was investigated. The total fluence of electron ranged from 5×1013 cm-2 to 1. 2×1016 cm-2. It is shown that the offset voltage (Voffset) emerges after the BJTs are irradiated, and the Voffset increases with the total dose rise. The Voffeset of BJT is caused by the irradiation-introduced defect levels that work in two ways. On one hand, the reduction of carriers caused by the levels eventually induces that the variation of build-in potential in BC junction is bigger than that in BE junction. On the other hand, the defect levels result in that the conduction band variation of BC junction is bigger than that of BE junction.%研究了双极型晶体管(BJT)高能电子(1.5 MeV)辐照的总注量效应,电子辐照的总注量为5×1013～1.2×1016 cm-2.实验结果表明,三极管经电子辐照后,有残余电压产生,残余电压随电子总注量的增加而增大.认为是由于辐照后产生的缺陷能级导致的去载流子效应使得BC结自建电势差变化量大于BE结,以及缺陷能级使BC结导带差变化量大于BE结这两方面原因引起的.