GaN 器件辐伏同位素电池的电输出性能研究

摘要

Two kinds of GaN PiN diodes were prepared to be the energy converters of betavoltaic batteries ,and irradiated by 63 Ni and 3 H radioactive sources . The Isc was 5.4 nA and Voc was 771 mV for 63 Ni source;the Isc was 10.8 nA and Voc was 839 mV for 3 H source .These results show that their Voc are far better than silicon diodes’ ,but their Isc are poor .And there are some differences between the theory values and experi-ment results .There would be greatly improving space in electrical performance of beta-voltaic isotope batteries with GaN diodes as the energy converters ,if the dislocation could be reduced in GaN material producing process ,the Ohmic contact could be prepared very well and the diodes configuration could be designed more optimizedly in the future .%利用63 Ni和3 H源分别辐照两种可作为辐伏电池换能单元的GaN基PiN结型器件，其输出短路电流（Isc ）和开路电压（Voc ）分别为：对于63 Ni源，Isc ＝5.4 nA ，Voc ＝771 mV ；对于3 H 源，Isc ＝10.8 nA ， Voc＝839 mV。其开路电压显著优于单晶硅基器件辐伏电池的输出结果，但与理论值有一定的差距。可能是GaN材料生长过程中产生的缺陷、电极欧姆接触不良以及器件结构等原因，导致短路电流和开路电压未能达到期望值。这些是提升GaN换能单元辐伏电池的电输出性能应解决的重要技术问题。