Zn1-x-yNaxCoyO薄膜的脉冲激光沉积制备及表征

摘要

采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的Zn0薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明:Na,Co共掺没有改变Zn0的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10%时,峰值最强且红移最明显,发光峰波长为397 nm,薄膜的电阻率最低,达到了8.34×10-1Ω·cm.深入讨论了上述结果的产生原因.%Zn1-x-yNax CoyO thin films were prepared by pulsed laser deposition (PLD) on Si( 111 ) substrates. The X-ray diffraction( XRD ), atomic force microscopy (AFM), fluorescence spectrometer and the Four-probe tester were used respectively to investigate the structure, surface structure, optical and electrical properties of the thin films. The optical and electrical properties of Zn1-x-y NaxCoyO doped with different Na-Co concentrations are investigated. The result indicates that the structure of films are zincite and the doping of Na-Co leads to the red-shift of the UV emission peak of ZnO. When the doping concentration of both Na and Go are 10％ , the film has the highest fluoresence intensity located at 397 nm, and the lowest resistivity of 8.34 × 10 -1 Ω ·cm is detected in this film. The reasons of above-mentioned phenomena are discussed in depth.