首页> 中文期刊> 《物理学报》 >增强辉光放电等离子体离子注入的三维PIC/MC模拟

增强辉光放电等离子体离子注入的三维PIC/MC模拟

         

摘要

Enhanced glow discharge plasma immersion ion implantation is self-consistently simulated using a three-dimensional PIC/MC model. The information about ion counts, space potential, plasma density and ion incident dose is obtained. The results show that the sheath has fully expanded at 5 μs. There is a stable equilibrium of ion counts at 15 μs, which corroborates the characteristic of self- sustaining glow discharge of EGD-PIII. In the space just below anode where is found a highest plasma density, verifying the electron focusing effect. The rate of implantation is steady and the incident dose is relatively uniform except at the rim of target. A higher pulse negative bias may increase the injection rate but reduce the dose uniformity at the same time.%采用三维粒子模拟/蒙特卡洛模型自洽地模拟了增强辉光放电等离子体离子注入过程中离子产生和注入,获得了放电空间的离子总数、电势分布、等离子体密度分布和离子入射剂量等信息.模拟结果表明,5μs时鞘层达到稳定扩展,15μs时离子的产生与注入达到平衡,证实了增强辉光放电等离子体离子注入能在一定条件下实现白持的辉光放电.注入过程中,在点状阳极正下方存在一个高密度的等离子体区域,证实了电子聚焦效应.除靶台边缘外,离子的注入速率稳定且入射剂量均匀.脉冲负偏压提高时注入速率增加但入射剂量的均匀性变差.

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