通过采用4，4’，4”．三（N-3-甲基苯基-N-苯基氨基）三苯胺（m-MTDATA）掺入MoO。作为器件的空穴传输层来提高酞菁铜（CuPc）／C60小分子有机太阳电池的效率．采用真空蒸镀的方法制备了一系列器件，其中结构为铟锡氧化物（ITO）／m-MTDATA：MoO2（3：1）（30nm）／CuPc（20nm）／C60（40nm）／4，7-二苯基-1，10-菲罗啉（Bphen）（8nm）／LiF（0．8nm）／Al（100am）的器件，在AMl．5（100mW／cm2）模拟太阳光的照射条件下，开路电压Koc=0．40V，短路电流Jsc=6．59mA／cm2填充因子为0．55，光电转换效率达1．46％，比没有空穴传输层的器件ITO／CuPc（20nm）／C60（40nm）／Bphen（8nm）／LiF（0．8nm）／A1（100nm）光电转换效率提高了38％．研究表明，加入m-MTDATA：MoO2（3：1）（30am）空穴传输层减小了有机层和ITO电极之间的接触电阻，从而减小了整个器件的串联电阻，提高了器件的光电转换效率．%MoOx doped 4, 4, 4-tris（N-（3-methylphenyl）-N-phenylamin） triphenylamine （ra-MTDATA） is used as a hole transport layer to improve the efficiency of CuPc/C60 small molecular organic photovoltaics. A series of devices is fabricated in a high vacuum system. One of the devices with the structure of indum tin oxides （ITO）/m-MTDATA：MoOx（3：I）（30 nm）/CuPc（20 nm）/C6o（40 nm）/Bphen （8 nm）/LiF（0.8 nm）/Al（100 rim） shows that the following parameters are achieved： the open circuit voltage Voc = 0.40 V, short-circuit current Jsc = 6.59 mA/cm2, fill factor of 0.55, and power conversion efficiency r/p = 1.46% under AM1.5 solar illumination. The efficiency of the device is improved by 38% compared with that of the device without hole transport layer ITO/CuPc（20 nm）/C6o（40 nm）/Bphen（8 nm）/LiF（0.8 nm）/Al（100 nm）. The improvement of the device performance may be attributed to the addition of ra-MTDATA：MoOx（3：1） （30 rim） hole transport layer that reduces the contact resistance between the ITO electrode and the organic layer, thus reducing the overall device series resistance and improving the efficiency of the device.
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