首页> 中文期刊> 《物理学报》 >质子辐照对国产“一”字型保偏光纤损伤效应研究

质子辐照对国产“一”字型保偏光纤损伤效应研究

         

摘要

航天器在空间环境中运行时,会受到质子的辐照,光纤环作为航天器上光纤陀螺的重要组成部件受辐照影响最为严重.为了研究国产"—"字型保偏光纤因质子辐照导致辐照诱导损耗的变化规律及其辐照损伤机理,选择质子能量为5 MeV和10 MeV,,光源波长为1310 nm,原位测量了光纤传输功率变化情况,计算出辐照诱导损耗.利用SRIM软件,模拟能量分别为5 MeV和10 MeV质子辐照在光纤中的电离和位移损伤分布.借助X射线光电子能谱仪分析辐照前后O Is和Si 2p解析谱,借助傅里叶变换红外光谱仪观察光纤辐照前后光谱变化情况研究发现,在波长为1310 nm处,光纤的辐照诱导损耗随着质子注量的增加而增长,主要原因是由于光纤纤芯中Si—OH的浓度增加所导致.而且能量为5 MeV质子辐照造成光纤的辐照诱导损耗比10 MeV严重,这是因为5 MeV质子在光纤纤芯处造成的位移和电离损伤均比10 MeV严重,即产生的Si—OH数量多.%A spacecraft running in the space environment would be irradiated by the proton,and the irradiation effects on the most important parts of the optical fiber gyroscope in the spacecraft -the optical fiber ring is the most.In order to investigate the irradiation damage induced by proton irradiation on the "Capsule" type polarization-maintaining optical fibers made in china,the variation of the trans-portation power at 1310 nm wavelength is measured by means of situ measurement for the 5 MeV and 10 MeV environments protons irradiation on the "Capsule" type polarization-maintaining optical fibers made in china.The irradiation induced loss is calculated by us.The Stopping and Range of Ions in Matter(SRIM) software was used to simulate the ionic and displacement damage of 5 MeV and 10 MeV energy protons irradiation on the optical fibers.The O I1s and Si 2p analytic spectrum of the before and after irradiation were obtained by means of X ray photoelectron spectroscopy(XPS).Using the Fourier transform infrared spectrometer(FTIR),we analyzed the before and after irradiation spectrum.The results show that at the 1310 nm wavelength,the rradiation induced loss of the of optical fibers increase with the increasing of the protons fluence due to the increase of the Si—OH concentration in optical fiber core.The 5 MeV proton irradiation induced loss is worse than that of the 10 MeV mainly because the more worse displacement and the ironic damage induced by 5 MeV proton at the position of the optical fiber core than that of 10 MeV.i.e..the more amount of Si—OH generation.

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