锰钴镍复合氧化物是一种具有半导体性质的热敏材料.本文采用金属有机沉积技术于室温条件下、在Si衬底上沉积一定厚度的Mn1.74Co0.72Ni0.54O4金属有机化合物薄膜，并通过醇热反应进行低温结晶化合成，可得到Mn1.74Co0.72Ni0.54O4结晶薄膜.通过X射线衍射、场发射扫描电子显微镜(FESEM)以及阻温特性等测试方法表征，讨论了醇热反应对锰钴镍热敏薄膜的物相结构、微观形貌以及电学性能的影响.X射线衍射图显示薄膜已出现尖晶石结构的特征峰.电镜照片说明结晶薄膜的表面较为平整、孔隙率低.阻温特性关系表明薄膜具有明显的负温度系数效应，室温(≈27◦)电阻率约为303.13Ω·cm.%Manganese cobalt nickel complex oxide is a thermal-sensitive material with the property of semiconductor. In this paper, Mn1.74Co0.72Ni0.54O4 (MCN) thin film was prepared in air using metal-organic-deposition method at room temperature on Si substrate, and the crystallization synthesis of the MCN thin film was prepared using alcohol-thermal reaction. According to X-ray diffraction, field emission scanning electron microscope (FESEM) and the relationship between resistivity and temperature, effects of MCN thin film made by alcohol-thermal reaction on crystalline microstructure, surface morphology and electrical properties were investigated. X-ray diffraction pattern showed that the MCN thin film appears to be spinel structure with predominant spinel peaks. Field emission scanning electron microscope showed that the surface morphology of MCN thin film is crack-free and compact surface. The relation-ship between resistivity and temperature of the thin film Mn1.74Co0.72Ni0.54O4 was that the resistivity decreases with the increase in temperature. The room temperature(≈27◦C) resistivity of the MCN thin film was 303.13Ω·cm.
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