Some bonds on the curved surface (CS) of silicon nanostructures can produce localized electron states in the band gap. Calculated results show that different curvature can form the characteristic electron states for some special bonding on nanosilicon surface, which are related to a series peaks in photoluminescience (PL), such as LN, LO1 and LO2 lines in PL spectra due to Si-N, Si=O and Si-O-Si bonds on the curved surface, respectively. In the same way, Si-Yb bond on the curved surface of Si nanostructures can manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as LYb line near 1550 nm in the electroluminescience (EL).%纳米硅结构使能带的带隙展宽,并形成准直接能带带隙结构.弯曲表面上的某些键合可以在带隙中产生局域电子态,计算表明：纳米硅弯曲表面上的Si-N, Si=O和Si-O-Si键合能够分别在带隙中2.02 eV,1.78 eV和2.03 eV附近形成局域态子带,对应了实验光致荧光谱(PL)中605 nm处的LN线、693 nm处的LO1线和604 nm处的LO2线特征发光.特别是, Si-Yb键合在纳米硅弯曲表面上可以将发光波长调控到光通信窗口,在1310 nm到1600 nm范围形成LYb线特征发光.
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