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Reducing decoherence in dc SQUID phase qubits.

机译:降低直流SQUID相位量子比特的退相干。

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摘要

This thesis examines sources of dissipation and dephasing in a dc SQUID phase qubit. Coupling of the qubit to the bias lines and lossy dielectrics causes the qubit to lose quantum information through a process known generally as decoherence. Using knowledge of the possible sources of decoherence, a dc SQUID phase qubit is designed with parameters that should have made it resistant to dissipation and dephasing from those sources. Device PB9 was a dc SQUID with one small area 0.23 (mum)2 Josephson junction with a critical current of 130 nA, which was meant to be the qubit junction, and a larger area 5 (mum)2 junction with a critical current of 8.6 muA, which acted as part of an inductive isolation network. The qubit junction was shunted by a 1.5 pF low-loss interdigitated capacitor. The dc current bias line had an on-chip LC filter with a cutoff frequency of 180 MHz. The other control lines were also designed to minimize coupling of dissipative elements to the qubit. According to a theoretical model of the dissipation and dephasing, the qubit was expected to have an energy relaxation T1 ≤ 8.4 mus and dephasing time To ∼ 1 mus.;Because of the relatively high Josephson inductance of the qubit junction, the device did not act perform like a conventional isolated single-junction phase qubit. Instead, the resonant modes that I observed were the normal modes of the entire SQUID.;At 20 mK and a frequency of 4.047 GHz, the maximum energy relaxation time of the device was found to be 350 +/- 70 ns, despite the optimized design. Through a study of T1 versus applied flux, T1 was found to depend on the strength of the coupling of the microwave drive line to the qubit. When the line was more coupled, T1 was shorter. This was evidence that the microwave line was overcoupled to the qubit, and was limiting the lifetime of the excited state T1.;Through a study of the spectroscopic coherence time T2* , which measured the effects of low-frequency inhomogeneous broadening and higher frequency dephasing from noise, I discovered that device PB9 has several sweet spots. In particular, the presence of a sweet spot with respect to critical current fluctuations allowed me to identify critical current noise as a major source of broadening and dephasing in the qubit. From the spectroscopy I estimated the 1/f critical current noise power density at 1 Hz was SI01 (1Hz) ≈ 10 (nA) 2/Hz and the 1/f flux noise power spectral density at 1 Hz was Sphi (1Hz) ≈ (110 muphi 0)2/Hz. Both of these values were quite high, possibly due to switching of the device between measurements.
机译:本文研究了直流SQUID相位qubit中的耗散和去相源。量子位与偏置线和有损电介质的耦合会导致量子位通过通常称为退相干的过程丢失量子信息。利用对退相干的可能来源的了解,设计了一个直流SQUID相位量子比特,其参数应使其能够抵抗这些来源的耗散和去相。器件PB9是一个直流SQUID,具有一个小面积0.23(mum)2约瑟夫森结,其临界电流为130 nA(这是量子位结),而一个较大的面积5(mum)2结,其临界电流为8.6 muA,充当感应隔离网络的一部分。量子位结由1.5 pF低损耗叉指电容器并联。直流电流偏置线具有一个片上LC滤波器,其截止频率为180 MHz。其他控制线还设计为最大程度地减少耗散元素与量子位的耦合。根据耗散和移相的理论模型,预计量子比特的能量弛豫T1≤8.4 mus,移相时间To〜1 mus .;由于量子比特结的约瑟夫森电感较高,因此该装置没有起作用表现像传统的隔离单结相位量子位。相反,我观察到的谐振模式是整个SQUID的正常模式。在20 mK和4.047 GHz的频率下,尽管进行了优化,但该设备的最大能量弛豫时间为350 +/- 70 ns。设计。通过研究T1与施加的通量的关系,发现T1取决于微波驱动线与量子位的耦合强度。当线路耦合程度更高时,T1会更短。这证明微波线被过度耦合到量子比特,并限制了激发态T1的寿命。通过对光谱相干时间T2 *的研究,该相干时间测量了低频非均匀展宽和高频移相的影响从噪音中,我发现PB9设备有几个优点。特别是,关于临界电流波动的最佳点的存在使我能够确定临界电流噪声是量子位中变宽和移相的主要来源。根据光谱,我估计1Hz时的1 / f临界电流噪声功率密度为SI01(1Hz)≈ 10(nA)2 / Hz和1f处的1 / f通量噪声功率谱密度为Sphi(1Hz)≈ (110 muphi 0)2 / Hz。这两个值都很高,可能是由于两次测量之间设备的切换所致。

著录项

  • 作者

    Przybysz, Anthony J.;

  • 作者单位

    University of Maryland, College Park.;

  • 授予单位 University of Maryland, College Park.;
  • 学科 Physics Low Temperature.;Physics Quantum.;Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 415 p.
  • 总页数 415
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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