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Increased light extraction and directional emission control in gallium nitride photonic crystal light emitting diodes.

机译:氮化镓光子晶体发光二极管的光提取和定向发射控制得到增强。

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摘要

GaN has become the prominent material for blue-green light emitting diodes (LEDs) and efficient white light sources. Advancements in LED efficiency for lighting has the potential to dramatically impact energy consumption world wide. A limiting factor to achieving high efficiencies in GaN LEDs is the light extraction efficiency. This work addresses many key issues pertaining to the use of PhCs to increase the extraction efficiency and emission directionality of GaN LEDs. Limitations in extraction efficiency of GaN photonic crystal light emitting diodes (LEDs) are addressed by implementing an LED design using both 2D photonic crystals (PhCs) in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Various materials are used to increase the index contrast of the IGL and the effects are measured. Increases in vertical emission as high as 3.5x are achieved for PhC LEDs with an Al0.12Ga0.88N IGL over non-PhC LEDs with a ∼30% improvement attributed to the incorporation of the AlGaN IGL. This enhancement is achieved by tailoring both the directionality and guided mode control.;The impact of incorporating PhCs and IGLs on LED device design and performance are addressed. Effects of etching the PhCs near the QWs have been observed and explanations for this behavior will be discussed. It will be shown that an un-doped IGL can severely limit current spreading in the n-type side of the device and have a detrimental impact on device performance. Finally, a method of patterning PhCs with periodicities as small as 230nm by laser interference lithography and imprint lithography has been developed to provide a fast, inexpensive method of pattering PhCs over large areas.
机译:GaN已成为蓝绿色发光二极管(LED)和高效白光源的主要材料。 LED照明效率的提高有可能极大地影响全世界的能源消耗。在GaN LED中实现高效率的限制因素是光提取效率。这项工作解决了许多与使用PhC来提高GaN LED的提取效率和发射方向性有关的关键问题。通过使用平面内的二维光子晶体(PhC)和垂直方向的折射率导引层(IGL)来实现LED设计,可以解决GaN光子晶体发光二极管(LED)提取效率的局限性。实验研究了PhCs对GaN LED的光提取和发射方向性的影响。角分辨电致发光清楚地显示了控制垂直模式轮廓和IGL以及根据PhC晶格的周期性调整发射轮廓的综合效果。使用各种材料来增加IGL的折射率对比,并测量效果。具有Al0.12Ga0.88N IGL的PhC LED相对于非PhC LED而言,垂直发射增加了3.5倍,归功于AlGaN IGL的引入,其垂直发射提高了约30%。通过调整方向性和引导模式控制,可以实现这种增强。解决了结合PhC和IGL对LED器件设计和性能的影响。已经观察到在QW附近蚀刻PhC的效果,并将讨论这种行为的解释。可以看出,未掺杂的IGL会严重限制器件n型侧的电流扩散,并对器件性能产生不利影响。最终,已经开发出一种通过激光干涉光刻和压印光刻对周期性小至230nm的PhC进行构图的方法,以提供一种快速,廉价的在大面积上构图PhC的方法。

著录项

  • 作者

    McGroddy, Kelly C.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 218 p.
  • 总页数 218
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:38:41

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