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Silicon evanescent devices for optical networks and buffers.

机译:用于光网络和缓冲器的硅消逝设备。

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摘要

The main driver today of the silicon photonics is the quest for silicon-based optoelectronic integrated circuits which can be manufactured in state-of-art high-volume silicon fabrication facilities. Additionally, it can open up vast and significant applications of photonics in optical interconnects in board-to-board, chip-to-chip, and intra-chip communications. Raman lasers and amplifiers, high speed modulators, and photodetectors have been successfully demonstrated and have widened the applications of silicon as an optoelectronic material. However, the indirect bandgap of silicon has been a major hurdle in achieving optical gain elements. Even though many different ways have been studied such as bandgap engineering, rare earth element doping and nano-patterned silicon, an electrically pumped silicon gain element has been an unsolved challenge.; One way to address the issue of having an electrically pumped optical gain element can be hybrid integration with III-V materials including die attachment of prefabricated III-V devices on silicon waveguide circuits, hetero-epitaxial growth of III-V gain layers on silicon substrates, and wafer bonding III-V gain layers on silicon.; This thesis reports on active photonic devices fabricated with a silicon passive silicon waveguide circuit using a low temperature oxygen plasma wafer bonding process, which is referred to as the silicon evanescent device platform. This integration platform is designed with the explicit objective of providing a scalable fabrication process for high volume manufacturing, and efficient light coupling between the active devices and the passive devices.; This thesis will initially detail first demonstrations of the silicon evanescent lasers, amplifiers, and photodetectors built on the silicon evanescent device platform. Next, two different integrated photonic devices, preamplified photoreceivers and optical buffers will be presented to show the feasibility of photonic integration on the silicon evanescent device platform.
机译:当今,硅光子学的主要驱动力是对可以在最先进的大批量硅制造设备中制造的基于硅的光电集成电路的追求。此外,它还可以在板对板,芯片对芯片和芯片内通信的光学互连中打开光子学的广泛且重要的应用。拉曼激光器和放大器,高速调制器和光电检测器已被成功演示,并拓宽了硅作为光电材料的应用范围。然而,硅的间接带隙一直是实现光学增益元件的主要障碍。尽管已经研究了许多不同的方法,例如带隙工程,稀土元素掺杂和纳米图案化硅,但电泵浦硅增益元件一直是一个尚未解决的挑战。解决具有电泵浦光学增益元件问题的一种方法是与III-V材料混合集成,包括将预制的III-V器件在硅波导电路上进行模片附着,在硅衬底上异质外延生长III-V增益层;以及在硅上的晶圆键合III-V增益层。本文报道了采用低温氧等离子体晶片键合工艺的硅无源硅波导电路制造的有源光子器件,该器件称为硅the逝器件平台。设计该集成平台的明确目标是为大规模生产提供可扩展的制造工艺,并在有源器件和无源器件之间提供有效的光耦合。本文首先将详细介绍基于硅the逝器件平台的硅e逝激光器,放大器和光电探测器的首次演示。接下来,将介绍两种不同的集成光子器件,前置放大的光接收器和光学缓冲器,以展示在硅e逝性器件平台上进行光子集成的可行性。

著录项

  • 作者

    Park, Hyundai.;

  • 作者单位

    University of California, Santa Barbara.$bElectrical & Computer Engineering.;

  • 授予单位 University of California, Santa Barbara.$bElectrical & Computer Engineering.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 193 p.
  • 总页数 193
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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