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Modulation of Quantum Dot Energy Levels by Surface Acoustic Waves for use as a Triggered Photon Source.

机译:表面声波对量子点能级的调制,用作触发光子源。

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摘要

The foundation for a triggered photon source was realized by convolving the energy bandgap of a quantum dot with a surface acoustic wave. The devices consisted of an InP substrate on which InAs/InP quantum dots were grown. It was then coated with a layer of piezoelectric ZnO by radio-frequency magnetic sputtering. Modulation of the device was enabled through aluminum interdigitated transducers that were deposited on the sample, which excited surface acoustic waves. The expected resonance of the interdigitated transducers was around 200 MHz. However, resonances at 200 MHz and 300 MHz were recorded, due a Sezawa mode excitation. The preferential excitation of modes was likely due to variations in the ZnO film thickness. The target quantum dot emission was around 1550 nm, matching with the C-band used in fibre optic communication channels. The largest wavelength measured for the ground state energy emissions from these dots was 1580 nm, though typical lowest energy emission peaks were in the range of 1300-1400 nm. Unidirectional Stark shifts in the photoluminescence emission of the quantum dots were observed as surface acoustic waves were applied. This quantum confined Stark effect is thought to be due the polarization of the InP/InAs due to the electric field in the ZnO layer, providing a second order effect. The electrical field from the ZnO layer potentially contributes a linear effect. The modulation of the quantum dot energy is due to the strain field but due to the electrical coupling form the ZnO layer, exact determination of the strain field's contribution is not possible. The emission modulation effect is quadratically dependent on both applied SAW power and inital emission energy. Convolution of the quantum dot emission with the surface acoustic wave-induced bandgap modulation was also observed, resulting in a split emission peak. A splitting of 4.97 meV was observed using a linear surface acoustic wave power density of at least 1.69 W/m and a laser excitation density of 3.17 muW/mum2.
机译:通过将量子点的能带隙与表面声波进行卷积来实现触发光子源的基础。器件由在其上生长有InAs / InP量子点的InP衬底组成。然后通过射频磁溅射法在其上涂覆一层压电ZnO。通过铝制叉指式换能器对设备进行调制,铝制叉指换能器激发了表面声波。叉指式换能器的预期谐振约为200 MHz。但是,由于Sezawa模式激发,记录了200 MHz和300 MHz的谐振。模式的优先激发可能是由于ZnO膜厚度的变化。目标量子点发射约为1550 nm,与光纤通信通道中使用的C波段相匹配。从这些点测得的基态能量发射的最大波长为1580 nm,尽管典型的最低能量发射峰在1300-1400 nm的范围内。当施加表面声波时,观察到量子点的光致发光发射的单向斯塔克位移。该量子限制的斯塔克效应被认为是由于ZnO层中的电场导致的InP / InAs的极化,从而提供了二级效应。 ZnO层产生的电场可能会产生线性效应。量子点能量的调制归因于应变场,但由于形成ZnO层的电耦合,无法精确确定应变场的贡献。发射调制效果在二次方取决于所施加的SAW功率和初始发射能量。还观察到量子点发射与表面声波引起的带隙调制的卷积,从而产生了分裂的发射峰。使用至少1.69 W / m的线性表面声波功率密度和3.17μW/ m2的激光激发密度,观察到4.97 meV的分裂。

著录项

  • 作者

    Hubert, Colin.;

  • 作者单位

    Queen's University (Canada).;

  • 授予单位 Queen's University (Canada).;
  • 学科 Quantum physics.
  • 学位 M.Appl.Sc.
  • 年度 2014
  • 页码 127 p.
  • 总页数 127
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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