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Optical spectroscopy of xenon-related defects in diamond.

机译:金刚石中与氙有关的缺陷的光谱学。

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摘要

The work presents the results of optical studies of Xe-related defect in diamond. This defect is one of a few having narrow zero-phonon line in the near-infrared part of the photo-luminescence spectra. It appears in diamond after Xe+ ion implantation followed by thermal annealing. Given unique physical properties of diamond (hardness, optical transparency in wide spectral range, chemical inertness, high thermal conductivity, low thermal expansion coefficient) and stability of Xe-related center it can be viewed as an potential candidate for the source of single-photons, or as optically manipulated qubit, not unlike nitrogen-vacancy center. However, compared to the latter Xe-related center is not as well understood and it is necessary to gain thorough understanding of its spatial structure, symmetry, electronic states and mechanisms of interaction with the host diamond lattice.;This thesis addresses several questions, in regard to Xe-related center: 1) How efficiently this center is formed in the implantation/annealing process; 2) How does it interact with the host lattice to produce both homogeneous and inhomogeneous shape of the 811.7 nm zero-phonon line; and 3) What is the type and nature of transitions responsible for the 811.7 nm zero-phonon line.;In answering the first question two methods for measuring the conversion efficiency of any kind of optically active defect have been developed and applied to Xe-related center in diamond. The study of line-broadening mechanisms showed how this center interacts with the strain produced by other neighboring Xe-centers, distributed in a plane-like geometry. Also, interaction with vibrational motions of the diamond lattice localized in the vicinity of the Xe-centers is analyzed and the parameters of this pseudo-local mode are found. Finally, using the effects of optical saturation in photo-luminescence under excitation with Gaussian laser beams it has been shown that 811.7 nm zero-phonon line is due to absorption and emission by circular magnetic dipole. Also, the site symmetry of Xe-related center has been confirmed as trigonal with the threefold axis oriented along direction in the diamond crystal.
机译:这项工作提出了与钻石中与氙有关的缺陷的光学研究结果。该缺陷是在光致发光光谱的近红外部分中具有窄零声子线的少数缺陷之一。 Xe +离子注入后进行热退火后,它会出现在钻石中。鉴于金刚石独特的物理特性(硬度,宽光谱范围内的光学透明性,化学惰性,高导热率,低热膨胀系数)和Xe相关中心的稳定性,可以将其视为单光子源的潜在候选者或作为光学操纵的量子位,与氮空位中心不同。然而,与后者有关的与Xe有关的中心相比,尚不为人所理解,有必要对它的空间结构,对称性,电子状态以及与主体金刚石晶格的相互作用机理有透彻的了解。关于Xe相关的中心:1)在植入/退火过程中如何有效地形成该中心; 2)它如何与主体晶格相互作用以产生811.7 nm零声子线的均质和不均质形状; 3)构成811.7 nm零声子线的跃迁的类型和性质是什么?;在回答第一个问题时,已经开发出两种测量任何类型的光学活性缺陷的转换效率的方法,并将其应用于与Xe有关的钻石中心。对线展宽机制的研究表明,该中心如何与其他相邻Xe中心产生的应变相互作用,并以平面状几何形状分布。此外,分析了与位于Xe中心附近的菱形晶格的振动运动的相互作用,并找到了该伪局部模式的参数。最后,利用高斯激光束激发下的光致发光中的光饱和效应,已表明811.7 nm零声子线归因于圆形磁偶极子的吸收和发射。而且,已经证实了与Xe有关的中心的位点对称为三角形,其三重轴沿金刚石晶体中的方向取向。

著录项

  • 作者

    Dziashko, Yury.;

  • 作者单位

    City University of New York.;

  • 授予单位 City University of New York.;
  • 学科 Optics.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 187 p.
  • 总页数 187
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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