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Dynamic Transport Measurements of VO2 Thin Films through the Metal-to-Insulator Transition

机译:通过金属到绝缘体的过渡动态测量VO2薄膜

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摘要

VO2 is a transition metal oxide material well known for its high magnitude metal-to-insulator transition (MIT) with a corresponding change in crystal structure. At room temperature, VO2 is found in an insulating monoclinic phase (P21/c) that upon heating through the transition temperature (Tc, ~341 K in bulk material) changes to a metallic rutile phase (P42/mnm). The MIT can be activated thermally by heating or cooling through Tc, but has also been shown to be sensitive to electric field, infrared radiation, pressure, and strain. The value of Tc is also highly tunable through doping and growth of strained epitaxial thin films. The massive 3-4 order of magnitude change in electrical resistivity (rho) has drawn interest for possible device level applications. The transition is characterized by the coexistence of rutile metallic domains and a monoclinic insulating matrix that results in a smooth progression of the DC transport and dielectric properties as the MIT is induced.;In this thesis, we present an overview of three novel transport experiments all of which involve epitaxial TiO2/VO2 films grown in a home-built low-pressure chemical vapor deposition system. The first experiment looks at the time evolution of the film resistance and capacitance as it settles for an extended period very near Tc. We report evidence that this settling process is characterized by at least two underlying relaxation processes.;The second experiment involves the deposition and ferromagnetic resonance (FMR) characterization of TiO2/VO2/Ru/Py heterostructures. Our analysis indicates enhanced spin pumping into the VO2 layer when in the metallic state that is associated with an increase in the effective Gilbert damping parameter.;Finally, we discuss the results of 1/f noise spectroscopy measurements collected on Hall-bar patterned VO2(100) films. We show that the processes governing noise along both crystallographic axes are identical and, in the metallic rutile state, follows a unique R-3 scaling behavior.
机译:VO2是一种过渡金属氧化物材料,因其高强度的金属到绝缘体过渡(MIT)以及相应的晶体结构变化而闻名。在室温下,VO2处于绝缘单斜晶相(P21 / c),加热至转变温度时(Tc,散装材料中约为341 K)变为金属金红石相(P42 / mnm)。 MIT可以通过加热或通过Tc进行冷却来热激活,但已证明对电场,红外辐射,压力和应变敏感。通过掺杂和生长应变的外延薄膜,Tc的值也很可调。电阻率(rho)的3-4个数量级的巨大变化引起了可能的器件级应用的兴趣。该转变的特征是金红石型金属畴和单斜晶绝缘基质共存,随着MIT的产生,其导致直流输运和介电性能的平稳发展。本文概述了三个新颖的输运实验其中涉及在自制的低压化学气相沉积系统中生长的外延TiO2 / VO2薄膜。第一个实验着眼于薄膜电阻和电容在非常接近Tc的较长时间内稳定下来的时间演变。我们报告的证据表明,该沉降过程的特征在于至少两个潜在的弛豫过程。第二个实验涉及TiO2 / VO2 / Ru / Py异质结构的沉积和铁磁共振(FMR)表征。我们的分析表明,在金属状态下,与有效吉尔伯特阻尼参数的增加相关的自旋泵入VO2层增强;最后,我们讨论了在霍尔棒状VO2上收集的1 / f噪声光谱测量结果( 100)电影。我们表明控制两个结晶轴上的噪声的过程是相同的,并且在金属金红石状态下,遵循独特的R-3缩放行为。

著录项

  • 作者

    Jones, Joshua Michael.;

  • 作者单位

    The University of Alabama.;

  • 授予单位 The University of Alabama.;
  • 学科 Condensed matter physics.;Materials science.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 138 p.
  • 总页数 138
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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