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The Electromechanical Responses of Suspended Graphene Ribbons for Electrostatic Discharge Applications.

机译:静电放电应用中悬浮石墨烯碳带的机电响应。

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摘要

This dissertation presents a novel suspended graphene ribbon device for electrostatic discharge (ESD) applications. The device structure is proposed and fabricated after careful design considerations. Compared to the conventional ESD devices such as diodes, bipolar junction transistors (BJTs), and metal-oxide-semiconductor field-effect transistors (MOSFETs), the proposed device structure is believed to render several advantages including zero leakage, low parasitic effects, fast response, and high current carrying capability, etc. A process flow is developed for higher yield and reliability of the suspended graphene ribbon device which is very delicate in nature. Direct current (DC) and transmission-line pulse test (TLP) measurements are carried out to investigate the switch-on behavior of the device which is crucial for ESD protection. DC measurement with a different configuration is used to characterize the mechanical shape evolution of the graphene ribbon upon biasing. Finite Element Simulations are also conducted to verify the experimental results, which are in good agreements. Furthermore, the breakdown properties of graphene ribbons are tested using TLP. It is found that graphene has a better current drivability compared to copper wires which is widely used as interconnects in integrated circuits (ICs). Also, bi-layer graphene has a higher breakdown current than monolayer graphene which indicates that multilayer graphene should be superior in current discharging. Last, Ab inito calculations are carried out to study the growth mechanism of multilayer graphene which is needed for graphene homo-epitaxy with precise control. It is found that a carbon cluster with six carbon atoms has the smallest kinetic barrier thus largest surface diffusivity during surface diffusion. So it is believed to be the most favorable diffusing species for graphene homo-epitaxy.
机译:本文提出了一种新型的用于静电放电(ESD)应用的悬浮石墨烯带器件。在仔细设计考虑后,提出并制造了器件结构。与传统的ESD器件(例如二极管,双极结晶体管(BJT)和金属氧化物半导体场效应晶体管(MOSFET))相比,所提出的器件结构被认为具有多种优势,包括零泄漏,低寄生效应,快速开发了一种工艺流程以提高悬浮石墨烯带器件的产量和可靠性,该器件本质上非常精致。进行了直流(DC)和传输线脉冲测试(TLP)测量,以研究设备的开启行为,这对于ESD保护至关重要。使用具有不同配置的DC测量来表征偏置时石墨烯带的机械形状演变。还进行了有限元模拟,以验证实验结果,两者吻合良好。此外,使用TLP测试了石墨烯带的击穿性能。已发现,与广泛用作集成电路(IC)互连的铜线相比,石墨烯具有更好的电流驱动性。同样,双层石墨烯比单层石墨烯具有更高的击穿电流,这表明多层石墨烯在电流放电方面应该是优越的。最后,进行了Ab inito计算,以精确控制石墨烯均相外延所需的多层石墨烯的生长机理。发现具有六个碳原子的碳簇具有最小的动力学势垒,因此在表面扩散期间具有最大的表面扩散率。因此,它被认为是石墨烯均质外延的最有利的扩散物质。

著录项

  • 作者

    Zhang, Wei.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Materials science.;Electrical engineering.
  • 学位 Ph.D.
  • 年度 2015
  • 页码 125 p.
  • 总页数 125
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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