1/F NOISE IN SEMICONDUCTORS AND METALS.

摘要

The nature of 1/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise and resistivity noise are presented. Results bearing on the Gaussian nature and the spatial coherence of 1/f noise are also given. The discovery of thermally activated spectral features in the noise from silicon-on-sapphire (SOS) samples is documented. A model for the origin of 1/f noise in SOS and one for that in bismuth are described. Possible generalizations of these findings are commented on.