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Integrated pyroelectric detectors for infrared detection.

机译:集成热释电探测器,用于红外探测。

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摘要

Silicon micromachining has been combined with integrated circuit technology to produce integrated sensors employing the pyroelectric effects in oriented zinc-oxide thin films. A number of 64 x 64-element infrared imagers with on-chip signal processing circuitry have been designed, fabricated, and tested. Surface micromachining has been used to make microstructures on which a zinc-oxide thin film is deposited using rf planar magnetron sputtering. An on-chip high-performance amplifier used in conjunction with the detector array was fabricated using NMOS technology. The fabrication of the infrared imagers is carried out in a nine-mask process with 3 ;A new approach for the integration of microsensors and integrated circuits has been investigated. The approach is called vertical integration. In this approach microsensors are fabricated directly above integrated circuits. The benefits of this approach include reduced chip areas, shortened electrical interconnection distances, and reduced parasitic losses. These features enhance the performance of the sensors and enable them to be used in applications where small-feature size is important such as in some medical applications.;A 64 x 64-element imager with on-chip signal processing/addressing circuits for infrared detection has been designed, fabricated, and tested. The ;The characteristics of the imager are suitable for use in real-time imaging applications. One application is the development of light-weight and affordable night-vision goggles. Current night-vision devices, which utilize other technologies, are expensive and cumbersome to use. Although the infrared pyroelectric imager is presented as an example of the vertical integrated microsensors, the same concept can also be applied to many other sensors such as deformable membrane pressure and force sensors.
机译:硅微机械加工已与集成电路技术相结合,以生产在取向氧化锌薄膜中利用热电效应的集成传感器。已经设计,制造和测试了许多具有片上信号处理电路的64 x 64元素红外成像仪。表面微机械加工已被用于制造使用射频平面磁控管溅射在其上沉积氧化锌薄膜的微结构。使用NMOS技术制造了与检测器阵列配合使用的片上高性能放大器。红外成像器的制造是在具有9个掩模的工艺中进行的; 3种工艺已被研究;研究了一种集成微传感器和集成电路的新方法。该方法称为垂直整合。在这种方法中,微传感器直接在集成电路上方制造。这种方法的好处包括减少芯片面积,缩短电气互连距离并减少寄生损耗。这些功能增强了传感器的性能,使其能够用于小尺寸重要的应用中,例如在某些医疗应用中;具有用于红外检测的片上信号处理/寻址电路的64 x 64元素成像器已设计,制造和测试。成像器的特性适合于实时成像应用。一种应用是开发轻便且价格合理的夜视镜。当前利用其他技术的夜视设备昂贵且使用麻烦。尽管将红外热释电成像仪作为垂直集成微传感器的示例,但相同的概念也可以应用于许多其他传感器,例如可变形膜压力传感器和力传感器。

著录项

  • 作者

    Pham, Lai Quoc.;

  • 作者单位

    University of Minnesota.;

  • 授予单位 University of Minnesota.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 1993
  • 页码 159 p.
  • 总页数 159
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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