Studies of the reaction of halogens with the surfaces of III-V semiconductors.

摘要

The surface chemistry and physics surrounding the reactions of fluorine and iodine with III-V semiconductor surfaces are studied in order to explore the processes underlying the etching of, and chemical growth of an insulating material upon, semiconducting substrates.;The result of exposing GaAs(001) and GaAs(110) to atomic fluorine, via XeF;The ease of decomposition of device structures made from In-containing semiconductors has instigated a search for etchants that can be used to process these materials at lower temperatures. As iodine is a contender for this application, the reaction of molecular iodine (I;Studies of the I