Ion-induced ripple formation.

摘要

Removal of surface atoms by ion sputtering at off normal angle of incidence causes morphological instability of the solid surface and often leads to periodic height modulation (ripples). This formation of ripples could be thought of as either problematic or advantageous depending on the application. Therefore, a thorough understanding of the mechanisms of ripple formation is important to be able to enhance control of the formation of the ripples.;This dissertation comprises two primary areas: (1) atomic force microscopy (AFM) of ripple formation and development, and revisiting of current theoretical models (of ripple formation) with increased scrutiny to better understand the fundamental mechanisms; (2) development of secondary ion mass spectroscopy (SIMS) with sample rotation to overcome problems that are associated with ripple formation during sputter depth profiling (SDP) and further our knowledge of the fundamental limits to SDP.;AFM studies were performed on ripples that were formed on semiconductor materials including GaAs, Si, CdTe, HgCdTe, InP, and diamond during 1-9 keV O;Depth resolution analyses on GaAs/AlGaAs superlattice and Si delta-doped GaAs demonstrate that SIMS with sample rotation provides depth independent depth resolution and constant secondary ion yield, facilitating quantitative analyses by preventing ripple formation, and that the fundamental limit to sputter depth profiling is ion-induced cascade atomic mixing.