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Caracterisation d'une barriere de diffusion de TiN oxydee par plasma (French text, titanium nitride).

机译:等离子体氧化的TiN扩散阻挡层的表征(法文,氮化钛)。

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摘要

The determination of the phases formed in AlSiCu/TiN/Ti contact metallization multilayers of VLSI/ULSI circuits by X-ray diffraction is useful in order to study the effect of the annealing temperature, the oxidation treatment of the TiN, the barrier thickness and also the Si or SiO{dollar}sb2{dollar} substrate. The most striking results are the formation of the Ti{dollar}sb7{dollar}Al{dollar}sb5{dollar}Si{dollar}sb{lcub}12{rcub}{dollar} phase and the Al recrystallization to the (111) orientation after a 550{dollar}spcirc{dollar}C annealing for a non-oxidized 50 nm TiN on Si substrate. These changes tend to be blocked when an air-exposed barrier is used. We therefore suggest that the reduced formation of Ti{dollar}sb7{dollar}Al{dollar}sb5{dollar}Si{dollar}sb{lcub}12{rcub}{dollar} results in improved stability of the layers after TiN oxidation.; A 45s ex-situ oxygen plasma treatment of the TiN barrier was studied and it was determined that this process increases the formation of Al{dollar}sb2{dollar}O{dollar}sb3{dollar} and shows a lower TiAl{dollar}sb3{dollar} proportion than a process air break.; The main problem with the ex-situ oxygen plasma is that an air break is still needed and therefore does not improve the process throughput. On the other hand, a 35s in-situ Ar/O{dollar}sb2{dollar} plasma developped by Mitel S.C.C. could be performed in the cluster tool prior to the Al alloy deposition. (Abstract shortened by UMI.)
机译:通过X射线衍射确定在VLSI / ULSI电路的AlSiCu / TiN / Ti接触金属化多层中形成的相对于研究退火温度,TiN的氧化处理,势垒厚度以及势垒的影响非常有用。 Si或SiO {dollar} sb2 {dollar}衬底。最引人注目的结果是形成了Ti {dollar} sb7 {dollar} Al {dollar} sb5 {dollar} Si {dollar} sb {lcub} 12 {rcub} {dollar}相的形成和Al重结晶至(111)在550 {spC退火后对Si衬底上的非氧化50 nm TiN进行取向。当使用暴露于空气的屏障时,这些变化往往会被阻止。因此,我们建议减少Ti {dollar} sb7 {dollar} Al {dollar} sb5 {dollar} Si {dollar} sb {lcub} 12 {rcub} {dollar}的形成可改善TiN氧化后层的稳定性。 ;研究了45s TiN阻挡层的异位氧等离子体处理,并确定此过程增加了Al {dollar} sb2 {dollar} O {dollar} sb3 {dollar}的形成并显示出较低的TiAl {dollar} sb3 {dollar}比过程中断的比例。非原位氧等离子体的主要问题是仍然需要空气中断,因此不会提高工艺产量。另一方面,由Mitel S.C.C.开发的35s原位Ar / O {dollar} sb2 {dollar}等离子体。可以在铝合金沉积之前在簇工具中执行。 (摘要由UMI缩短。)

著录项

  • 作者

    Fortin, Vincent.;

  • 作者单位

    Ecole Polytechnique, Montreal (Canada).;

  • 授予单位 Ecole Polytechnique, Montreal (Canada).;
  • 学科 Engineering Materials Science.; Engineering Metallurgy.
  • 学位 M.Sc.A.
  • 年度 1997
  • 页码 125 p.
  • 总页数 125
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;冶金工业;
  • 关键词

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