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Integrated planar gallium arsenide Schottky mixers for submillimeter wavelength receivers.

机译:集成平面砷化镓肖特基混频器,用于亚毫米波长接收器。

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Two integration technologies have been investigated. The first is the quartz upside-down inverted device (QUID) technology invented at JPL. Through this research QUID mixers operating at 240 GHz were fabricated and tested, thereby demonstrating the technology using UVa fabrication equipment and processes. A major drawback of the QUID integration process is that a layer of epoxy is used to adhere the diodes an metal films to the quartz. This epoxy is lossy and suffers from reliability concerns related to long term robustness and out-gassing. Through this research, the QUID process was extended to include a new etch step which removes the epoxy from all areas of circuit except between the quartz substrate and the attached layers. This resulted in the best published planar mixer sensitivity in the 200 to 300 GHz frequency range. This process was also transferred to JPL, where it helped improve the bandwidth of their 640 GHz mixers to meet the requirements of NASA's EOS-MLS mission.;The new etch process does not remove the layer of epoxy that is trapped in the critical region between the anode/finger and the quartz substrate. To avoid this concern, a new fabrication process was developed. The Method of Adhesion by Spin-on-dielectric Temperature Enhanced Reflow (MASTER) uses a novel semiconductor to substrate bonding process to eliminate the necessity of epoxy bonding. This process was fully developed and integrated mixers were fabricated for 585 GHz, 640 GHz, and 1 THz. The 585 GHz mixers were fully designed using computer modeling tools, were extremely easy to assemble, and most importantly exhibited record performance, Tsys = 1631 K, T mix = 1135 K, Lmix = 6.5 dB (all DSB). This result was accomplished without the use of mechanical tuning elements and was consistent for four assembled mixers, showing an unprecedented level of repeatability.;Through this dissertation research a new semiconductor on quartz integration technology has been created. This technology was demonstrated through the design, fabrication, and testing of a 585 GHz integrated mixer that is the most sensitive room temperature mixer ever reported for operation above 500 GHz. It is also the first planar mixer to outperform the best whisker contacted components in this frequency range. In addition to improved sensitivity, the new integrated technology offers greater bandwidth without reliance on mechanical tuners, a simplified design process, easier assembly, and drastically improved repeatability. As this integration technology is applied to mixers and multipliers throughout the terahertz range, it will significantly improve performance and reduce costs. Thus, this research has made an important contribution toward the creation of a commercially viable terahertz technology base. (Abstract shortened by UMI.)
机译:已经研究了两种集成技术。第一种是JPL发明的石英倒置倒装器件(QUID)技术。通过这项研究,制造并测试了工作在240 GHz的QUID混频器,从而证明了使用UVa制造设备和工艺的技术。 QUID集成过程的主要缺点是使用环氧树脂层将二极管和金属膜粘附到石英上。这种环氧树脂是有损耗的,并且存在与长期坚固性和放气有关的可靠性问题。通过这项研究,QUID工艺得到了扩展,包括一个新的蚀刻步骤,该蚀刻步骤可除去电路板上除石英衬底和附着层之间的所有区域中的环氧树脂。这导致了200至300 GHz频率范围内最佳的平面混频器灵敏度发布。此过程也转移到JPL,在那里它帮助改善了其640 GHz混频器的带宽以满足NASA EOS-MLS任务的要求。;新的蚀刻过程并未去除滞留在两者之间关键区域的环氧树脂层阳极/手指和石英基板。为了避免这种担忧,开发了一种新的制造工艺。通过旋涂电介质温度增强回流的粘合方法(MASTER)使用了一种新型的半导体与基板的粘合工艺,从而消除了环氧树脂粘合的必要性。该工艺已得到充分开发,并制造了用于585 GHz,640 GHz和1 THz的集成混频器。 585 GHz混频器是使用计算机建模工具进行全面设计的,非常容易组装,最重要的是表现出创纪录的性能,Tsys = 1631 K,T mix = 1135 K,Lmix = 6.5 dB(所有DSB)。该结果无需使用机械调谐元件即可完成,并且与四个组装好的混频器一致,显示出前所未有的可重复性水平。通过本论文的研究,创造了一种基于石英集成技术的新型半导体。 585 GHz集成混频器的设计,制造和测试证明了该技术,它是有史以来最敏感的室温混频器,用于500 GHz以上的运行。它也是第一台在该频率范围内性能优于最佳晶须接触组件的平面混频器。除了提高灵敏度外,新的集成技术还提供了更大的带宽,而无需依靠机械调谐器,简化了设计过程,简化了装配,并大大提高了可重复性。由于该集成技术已应用于整个太赫兹范围的混频器和乘法器,因此将显着提高性能并降低成本。因此,这项研究为建立商业上可行的太赫兹技术基础做出了重要贡献。 (摘要由UMI缩短。)

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