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Nucleation and growth of combustion flame deposited diamond coatings on silicon nitride.

机译:氮化硅上燃烧火焰沉积金刚石涂层的成核和生长。

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摘要

An investigation has been performed on the kinetics of diamond nucleation on silicon nitride (Si3N4) based materials during oxy-acetylene combustion flame chemical vapor deposition. The deposits were characterized using scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) techniques. Kinetic parameters of the nucleation process, such as nucleation rate (I), period of initial nuclei formation (tng), and maximum nucleation density (Nd) were experimentally determined. It was concluded that at low temperatures (Ts 875°C), the observed nucleation density is due to epitaxial or pseudo-epitaxial growth on residual particles on the substrate surface. At higher temperatures (Ts > 875°C), heterogeneous nucleation of diamond on Si3N4 occurs with an apparent activation energy ( Eahet ) of 18 kcal/mol. From an Arrhenius plot of particle growth rate, the activation energy (Ea) for diamond growth was calculated to be 9 kcal/mol. These results suggest that the energy barrier associated with the heterogeneous nucleation process ( Eahet > Ea) may in fact be responsible for the observed low nucleation densities on Si3N4 substrates. Consequently, nucleation density on Si3N4 is limited by the concentration of available sites for nuclei formation. As surface diffusion to those sites was determined to be negligible, growth of stable nuclei occurs via direct impingement of gas phase species.; Based on these conclusions, a multistage deposition technique was developed to deposit continuous diamond coatings on untreated Si3N4 substrates. This two stage technique consisted of (i) an in situ flame pretreatment of the substrate to enhance nucleation through the formation of SiC and (ii) subsequent growth on the flame pretreated surface under optimized parameters. Using a previously developed compression test for brittle coating/substrate systems, the adhesion of multistage deposited coatings was compared to conventionally deposited coatings. Normalized values of adhesion for the multistage coatings were observed to be the same order of magnitude as the conventionally seeded diamond coatings. However, the failure mechanisms of the two coatings were observed to be significantly different. Multistage coating failure was characterized by partial ( typically 5%) delamination while conventionally seeded coatings were observed to completely disintegrate (100% delamination) at failure. Thus, it was projected that the fracture toughness of the multistage deposited coatings may be superior to that of conventionally seeded coatings.; Finally, a modified flame technique is introduced to remedy a number of deficiencies and increase the commercial viability of combustion flame synthesis. This technique consists of simple modifications to conventional apparatus which significantly enhances the deposition area and expands the number of candidate substrate materials and geometries that can be coated using combustion flame CVD.
机译:在氧-乙炔燃烧火焰化学气相沉积过程中,对氮化硅(Si 3 N 4 )基材料上金刚石成核的动力学进行了研究。使用扫描电子显微镜(SEM),X射线衍射(XRD),X射线光电子能谱(XPS)和原子力显微镜(AFM)技术对沉积物进行表征。成核过程的动力学参数,例如成核速率( I ),初始成核周期( t ng )和最大成核密度( N d )是通过实验确定的。结论是,在低温(T s s 3 N 4 上出现金刚石的异质成核具有明显的活化能( E a het )的 18 kcal / mol。根据Arrhenius粒子生长速率图,钻石生长的活化能( E a )计算为 9 kcal / mol。这些结果表明,与非均相成核过程相关的能垒( E a het E a )实际上可能是导致在Si 3 N 4 个基板。因此,Si 3 N 4 上的成核密度受到成核可用位点浓度的限制。由于确定到这些位置的表面扩散可以忽略不计,因此,通过直接撞击气相物质可以产生稳定的原子核。基于这些结论,开发了一种多阶段沉积技术,可以在未经处理的Si 3 N 4 衬底上沉积连续的金刚石涂层。这两个阶段的技术包括(i)对基板进行原位火焰预处理以通过形成SiC来增强成核作用,以及(ii)随后在优化参数下在火焰预处理的表面上进行生长。使用先前开发的用于脆性涂层/基材系统的压缩测试,将多级沉积涂层的附着力与常规沉积涂层进行了比较。观察到多级涂层的归一化粘合力值与常规晶种金刚石涂层的数量级相同。然而,观察到两种涂层的破坏机理明显不同。多阶段涂层失效的特征是部分(<数学> 通常为5%)分层,而观察到常规播种的涂层在失效时会完全崩解(100%分层)。因此,预计多阶段沉积的涂层的断裂韧性可能优于传统的种子涂层。最后,引入了改进的火焰技术以弥补许多缺陷并提高燃烧火焰合成的商业可行性。该技术包括对常规设备的简单修改,可显着增加沉积面积并扩大可使用燃烧火焰CVD进行涂覆的候选基材材料和几何形状的数量。

著录项

  • 作者

    Rozbicki, Robert T.;

  • 作者单位

    Boston University.;

  • 授予单位 Boston University.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 164 p.
  • 总页数 164
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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