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Focus, edge detection, and CCD camera characterization for development of an optical overlay calibration standard.

机译:聚焦,边缘检测和CCD相机特性描述,用于开发光学叠加校准标准。

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摘要

In order to ensure continued growth and development, a consortium of IC manufacturers has produced a "roadmap" of critical technologies immediately needed, and predicted to be needed, by the industry in the near future. Reduction of critical dimensions (the smallest dimensions of an IC, typically the CMOS gate length) necessitate tighter control over the alignment of one mask (i.e., lithographic) level relative to another. Measurement of the relative alignment of two such masks is known as "overlay metrology." Reference standards for calibration of present and planned overlay metrology tools must be developed for the IC industry to meet their anticipated needs.;This work contributes to the development of calibration standards and methods for overlay metrology by consideration and characterization of several aspects of overlay measurement that introduce error into the measurement. Unavoidable variations in the focus response of an overlay tool lead to errors due to coupling of lateral motion of the measuring microscope with its focus motion, and its variation of optical aberrations with focus. We consider various algorithms available for autofocus of an optical microscope. The algorithms have been tested with simulated and real data. We have found that an algorithm's response depends crucially on the material system being investigated. We also determined an optimal algorithm of those tested for use on the NIST optical overlay metrology tool. Detection of feature edges and their positions on the IC are critical to overlay metrology. We investigated various algorithms for edge detection appropriate for the optical overlay metrology tool at the National Institute of Standards and Technology (NIST). Results comparing the performance of the recommended algorithm against various algorithms used in the industry are presented. Length standards are normally calibrated with a scanning photometric stage monitored by laser interferometry. Optical overlay patterns are measured with digital charge coupled device cameras viewing a stationary stage. We investigated the potential errors introduced into the overlay measurement by the use of such cameras. We present methods for mapping and correction of the errors introduced by the cameras and their associated optical systems.
机译:为了确保持续的增长和发展,IC制造商联盟已经制定了关键技术的“路线图”,这些关键技术在不久的将来立即成为业界所需要的,并且预计将是必需的。减小关键尺寸(IC的最小尺寸,通常是CMOS栅极长度)需要对一个掩模(即,光刻)层相对于另一个掩模层的对准进行更严格的控制。两个这样的掩模的相对对准的测量被称为“重叠计量”。必须为IC行业开发满足当前和计划中的覆盖计量工具校准要求的参考标准,以满足其预期需求;这项工作通过考虑和表征覆盖测量的多个方面,为覆盖计量的校准标准和方法的发展做出了贡献在测量中引入误差。覆盖工具的聚焦响应中不可避免的变化会导致误差,这是由于测量显微镜的横向运动与其聚焦运动以及光学像差随聚焦的变化而引起的。我们考虑了可用于光学显微镜自动聚焦的各种算法。该算法已经过模拟和真实数据测试。我们已经发现,算法的响应关键取决于所研究的材料系统。我们还确定了用于NIST光学叠加量测工具的最佳算法。检测特征边缘及其在IC上的位置对于覆盖计量至关重要。我们研究了适用于美国国家标准技术研究院(NIST)光学重叠计量工具的各种边缘检测算法。给出了将推荐算法的性能与行业中使用的各种算法进行比较的结果。长度标准通常通过激光干涉仪监控的扫描光度平台进行校准。光学覆盖图案是通过观察固定台的数字电荷耦合设备相机测量的。我们调查了通过使用此类相机引入叠加测量的潜在误差。我们提出了映射和校正由照相机及其相关的光学系统引入的误差的方法。

著录项

  • 作者

    Fox, Stephen Harris.;

  • 作者单位

    University of Maryland, College Park.;

  • 授予单位 University of Maryland, College Park.;
  • 学科 Engineering Electronics and Electrical.;Physics Optics.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 132 p.
  • 总页数 132
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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