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Spin-splitting and metallic behavior in two-dimensional systems.

机译:二维系统中的自旋分裂和金属行为。

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摘要

This thesis reports the results of low-temperature measurements related to spin-splitting, and the recently observed metallic behavior, in two-dimensional (2D) systems.; We demonstrate that the metallic behavior and apparent metal-insulator phase transition appear in a 2D electron system in an AlAs quantum well. Following this, we study the effect of spin-orbit-induced zero-magnetic-field ( B = 0) spin-splitting on the metallic behavior of 2D hole systems in GaAs quantum wells. Front and back gates are used to change the symmetry of the quantum well while keeping the density constant. This tunes the spin-splitting, which is measured using the Shubnikov-de Haas oscillations. By using both experimental results and theoretical calculations, we show that the often-used relation between the Shubnikov-de Haas oscillation frequencies and the B = 0 spin-splitting, p+/- = ehf+/-SdH , is only approximately accurate for systems with large spin-orbit coupling.; Furthermore, we find that changing the B = 0 spin-splitting significantly affects the temperature dependence of the B = 0 resistivity. Qualitatively, increasing the spin-splitting at constant density has an effect similar to decreasing the density. Our measurements are all done with the samples at densities such that they exhibit metallic behavior, although the lowest measured density is near that at which insulating behavior is expected to appear.; Finally, the 2D hole systems are studied in the presence of a magnetic field B applied in the plane of the system. We measure Shubnikov-de Haas oscillations in the presence of in-plane B and find a surprising dependence of the spin-subband densities on B. Measurements with in-plane B on lower density samples reveal a remarkable dependence of the magnetoresistance features, and in particular the value of B above which the resistivity exhibits insulating behavior, on the direction of B relative to both the crystal axes and the current direction. To explain the data, the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of B, as well as the coupling of the orbital motion to B, need to be taken into account.
机译:本文报道了在二维(2D)系统中与自旋分裂有关的低温测量结果以及最近观察到的金属行为。我们证明了金属行为和表观的金属-绝缘体相变出现在AlAs量子阱中的二维电子系统中。在此之后,我们研究了自旋轨道诱导的零磁场(B = 0)自旋分裂对GaAs量子阱中2D空穴系统的金属行为的影响。正反栅用于改变量子阱的对称性,同时保持密度恒定。这将调整自旋分裂,这是使用Shubnikov-de Haas振荡测量的。通过使用实验结果和理论计算,我们证明了Shubnikov-de Haas振荡频率与B = 0自旋分裂,p +/- = ehf +/- SdH之间的常用关系仅对于具有自旋轨道耦合大。此外,我们发现改变B = 0自旋分裂会显着影响B = 0电阻率的温度依赖性。定性地,以恒定的密度增加自旋分裂的效果类似于降低密度。尽管样品的最低密度接近预期的绝缘性能,但我们的测量都是以样品的密度进行的,以使其表现出金属性能。最后,在存在于系统平面中的磁场B的情况下研究2D孔系统。我们在平面B的存在下测量Shubnikov-de Haas振荡,发现自旋子带密度对B的出乎意料的依赖性。在平面B上对较低密度样品的测量显示出磁阻特性的显着依赖性,并且在特别是在相对于晶轴和电流方向的B方向上电阻率表现出绝缘特性的B值。为了解释数据,需要考虑空穴的各向异性带结构和在存在B的情况下自旋子带的重新聚集,以及轨道运动与B的耦合。

著录项

  • 作者

    Papadakis, Stergios John.;

  • 作者单位

    Princeton University.;

  • 授予单位 Princeton University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 163 p.
  • 总页数 163
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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