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Ion tracks in solids: Sputtering and surface modification.

机译:固体中的离子轨迹:溅射和表面改性。

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A swift ion bombarding a solid forms a track of excitations and ionizations, creating a very high energy density over a narrow region. At the surface, this can lead to atom/molecule ejection (sputtering) and surface damage. An unexplained result for electronically induced sputtering is that the yield Y (i.e., the number of atoms/molecules ejected by a single projectile) appears to depend quadratically on the energy loss per unit path length, dE/dx, for molecular condensed gas solids at large dE/dx. This data has been parametrized using Thermal Spike models.; Using Molecular Dynamics (MD) simulations, I calculated the sputtering yield from a cylindrically energized region and found that the analytic and semi-analytic thermal spike models cannot be applied at large excitation densities. The main reasons are the following: (a) the high temperature of the track produces large density and pressure changes, which are typically neglected in these models; (b) melting also occurs and, after a pressure pulse is released, the phase change interface controls the heat flux; (c) even if the previous limitations are accounted for by using the complete set of 1-D hydrodynamic equations, the surface is not included in most models, but energy transport towards the surface enhances the sputtering. Therefore, MD simulations are required to understand sputtering at high energy densities.; The MD yields were found to be nearly linear in the energy density driving sputtering, (dE/dx)eff, at high (dE/dx)eff and constant initial track radius, rcyl. Therefore, I have analyzed two explanations for the experimental yields. First, ( dE/dx)eff could be non-linear in dE/dx if, for instance, Coulomb explosion were driving the sputtering. MD simulations of Coulomb explosion were studied, but the effectiveness of this process was shown to be very sensitive to the neutralization rate of the ions in the track. Second, as the MD yields increased with rcyl for fixed (dE/ dx)eff, I examined the growth of rcyl with (dE/dx) for sputtering of condensed gas solids by MeV He+. Finally, MD calculations of cratering and surface modification produced by an incident ion were found to exhibit the same trends seen in experiments.
机译:快速离子轰击固体会形成激发和电离的轨迹,从而在狭窄区域内产生很高的能量密度。在表面上,这可能导致原子/分子喷射(溅射)和表面损坏。电子诱导溅射的无法解释的结果是,产率 Y (即单个弹丸所喷射的原子/分子的数量)似乎二次取决于单位路径长度的能量损耗, dE / dx ,用于大 dE / dx 的分子冷凝气体固体。该数据已使用Thermal Spike模型进行了参数化。使用分子动力学(MD)模拟,我计算了从圆柱通电区域的溅射产率,发现解析和半解析热尖峰模型无法应用于大激发密度。主要原因如下:(a)轨道的高温会产生较大的密度和压力变化,这些模型通常忽略了这些变化; (b)也发生熔化,并且在释放压力脉冲后,相变界面控制热通量; (c)即使以前的限制是通过使用完整的一维流体动力学方程组解决的,大多数模型中也不包括表面,但是向表面的能量传输会增强溅射。因此,需要进行MD模拟以了解高能量密度下的溅射。发现在驱动溅射的能量密度中,MD产率几乎是线性的,( dE / dx eff ,在高( dE / dx eff 且初始轨迹半径恒定的情况下, r cyl 。因此,我分析了实验产量的两种解释。首先,( dE / dx eff dE 中可能是非线性的/ dx ,例如库仑爆炸驱动溅射。研究了库仑爆炸的MD模拟,但是该过程的有效性对轨道中离子的中和速率非常敏感。其次,随着固定( dE / dx r cyl 的MD产量的增加> eff ,我检查了 r cyl 与( dE / dx )用于通过MeV He + 溅射冷凝的气体固体。最后,发现由入射离子产生的缩孔和表面改性的MD计算显示出与实验相同的趋势。

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