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Heat-up Synthesis of Photoluminescence Tunable Silver Indium Sulfide Based Nanocrystals and Their Cellular Imaging Applications.

机译:光致发光可调谐银铟硫基纳米晶体的热合成及其细胞成像应用。

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摘要

Semiconductor nanocrystals (NCs) are of great interest in bioimaging and biosensing due to their unique optical properties. Recently, cadmium-free I-III-VI NCs as well as their core/shell structures have been paid great attention due to their low toxicity and excellent optical properties. However, significant efforts are still needed to develop heat-up synthetic strategies to produce high quality I-III-VI NCs with high quantum yields and flexible photoluminescence tunability, especially for less studied Ag-In-S (AIS) NCs. Therefore, the work presented in this thesis focuses on the following two aspects.;First, a simple and safe heat-up based synthetic system was first developed to synthesize high quality AIS NCs and AIS/ZnS with high quantum efficiency. The quantum yields (QYs) of the produced AIS NCs and AIS/ZnS NCs are around 13% and 41%, respectively. Their morphologies, compositions and crystal structures were further studied by TEM, EDX and XRD.;We also investigated the effect of different indium precursors on NC optical properties. It was found that the photoluminescence (PL) peak-wavelength of AIS NCs prepared from indium acetate is in the range from 596 to 604 nm, and that of AIS NCs using indium chloride is from 641 to 660 nm. AIS and AIS/ZnS NCs prepared from indium acetate present around 15% and 40% QYs, and both AIS and AIS/ZnS NCs prepared from indium chloride present around 31% QYs. The PL decay study reveals that the lifetimes of AIS and AIS/ZnS NCs prepared from indium chloride are 2?4 times larger than those of AIS and AIS/ZnS NCs using indium acetate. Furthermore, AIS NCs prepared from indium chloride have a slower photobleaching dynamics than AIS NCs prepared from indium acetate, and ZnS shell coating on both types of AIS NCs significantly improves their photostability against UV exposure.;To further tune the emission wavelength of AIS NCs, high quality Cu doped AIS and AIS/ZnS NCs have been first synthesized via a surface doping approach. By increasing Cu precursor concentrations in doping, Cu doped AIS NCs exhibit a photoluminescence red-shift from ~ 600 nm to 660 nm with quantum yields from around 30% to 20%. After ZnS coating process, Cu doped AIS/ZnS NCs exhibit photoluminescence peaks from around 570 nm to 610 nm with significantly enhanced quantum yields to 50 ~ 60%. Moreover, we found that Cu doping in AIS can prolong the photoluminescence lifetime of NCs, and the average photoluminescence lifetime for the prepared Cu doped AIS and AIS/ZnS NCs is in the range of 300 ~ 500 ns.;Last, to demonstrate the cellular imaging applications of the prepared NCs, AIS/ZnS NCs were encapsulated within poly(lactide-co-glycolide)-poly(ethylene glycol) (PLGA-PEG) micelles through self-assembly. Glioma-specific peptide chlorotoxin (CTX) was covalently coupled to the prepared AIS/ZnS micelles. The cellular uptake/internalization study indicates that the CTX conjugated AIS/ZnS micelles can be specifically and significantly internalized into brain tumor cells U-87 via a CTX-membrane-bound matrix metalloproteinase-2 (MMP-2) interaction, but not into non-glioma cells.
机译:半导体纳米晶体(NCs)由于其独特的光学特性而在生物成像和生物传感领域引起了极大的兴趣。近来,无镉的I-III-VI NC及其核/壳结构因其低毒性和出色的光学性能而受到了广泛的关注。但是,仍需要大量努力来开发加热合成策略,以生产具有高量子产率和灵活的光致发光可调性的高质量I-III-VI NC,特别是对于研究较少的Ag-In-S(AIS)NC。因此,本文的工作主要集中在以下两个方面:首先,开发了一种简单安全的基于加热的合成系统,用于合成高量子效率的高质量AIS NC和AIS / ZnS。产生的AIS NC和AIS / ZnS NC的量子产率(QYs)分别约为13%和41%。通过TEM,EDX和XRD进一步研究了它们的形貌,组成和晶体结构。我们还研究了不同铟前体对NC光学性能的影响。发现由乙酸铟制备的AIS NC的光致发光(PL)峰值波长在596至604nm的范围内,并且使用氯化铟的AIS NC的光致发光(PL)峰值波长在641至660nm的范围内。由醋酸铟制备的AIS和AIS / ZnS NCs的QY约为15%和40%,而由氯化铟制备的AIS和AIS / ZnS NCs的QY约为31%。 PL衰减研究表明,用氯化铟制备的AIS和AIS / ZnS NC的寿命是使用乙酸铟制备的AIS和AIS / ZnS NC的寿命的2-4倍。此外,由氯化铟制备的AIS NC比由乙酸铟制备的AIS NC具有较慢的光漂白动力学,两种类型的AIS NC上的ZnS外壳涂层均可显着提高其抗紫外线暴露的光稳定性。为了进一步调整AIS NC的发射波长,高质量的Cu掺杂AIS和AIS / ZnS NCs首先通过表面掺杂方法合成。通过增加掺杂中的铜前驱物浓度,掺杂铜的AIS NCs的光致发光红移范围从〜600 nm变为660 nm,量子产率约为30%至20%。经过ZnS涂层处理后,掺杂Cu的AIS / ZnS NCs出现了从570 nm到610 nm的光致发光峰,量子产率显着提高到50〜60%。此外,我们发现AIS中的Cu掺杂可以延长NCs的光致发光寿命,而制备的Cu掺杂的AIS和AIS / ZnS NCs的平均光致发光寿命为300〜500 ns。制备的NC的成像应用,AIS / ZnS NC通过自组装封装在聚(丙交酯-共-乙交酯)-聚(乙二醇)(PLGA-PEG)胶束中。胶质瘤特异性肽氯毒素(CTX)与制备的AIS / ZnS胶束共价偶联。细胞摄取/内在化研究表明,CTX偶联的AIS / ZnS胶束可以通过CTX膜结合基质金属蛋白酶2(MMP-2)相互作用特异性地和显着地内化到脑肿瘤细胞U-87中,但不能非内化-神经胶质瘤细胞。

著录项

  • 作者

    Chen, Siqi.;

  • 作者单位

    University of Nevada, Reno.;

  • 授予单位 University of Nevada, Reno.;
  • 学科 Biomedical engineering.;Nanotechnology.
  • 学位 M.S.
  • 年度 2016
  • 页码 161 p.
  • 总页数 161
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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