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Fabrication and assessment of structure, composition, and electronic properties of nanowire arrays.

机译:纳米线阵列的结构,组成和电子性能的制造和评估。

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Nanocomposite materials consisting of arrays of parallel, uniform-diameter nanowires within a supporting matrix have a variety of potential applications. The focus of this work is on two nanowire array systems, bismuth and bismuth telluride nanowires in alumina templates. These systems are both promising for thermoelectric applications due to an expected increase in thermoelectric efficiency with reduced dimensionality.; Bismuth telluride nanowire arrays were fabricated by electrochemical deposition of Bi2Te3 into porous anodic alumina templates. A process has been developed that allows for the production of high density (∼5 × 109/cm2), high aspect-ratio (>1000), ordered nanowire arrays over large areas (>1mm2), which will enable routine assessment of the array properties as well as potential incorporation into existing device structures. High spatial resolution characterization techniques, including imaging, diffraction, and energy-dispersive spectroscopy in the transmission electron microscope (TEM), have been employed to assess the structure and composition in the arrays. The nanowires are dense, polycrystalline Bi2Te3 with strong texturing along the wire axis. A short (5 μm) Te-rich composition gradient was identified at the base of the pores.; In addition, the composition, structure, and electronic properties of pressure-injected bismuth nanowire arrays have been assessed at high spatial resolution by employing imaging, diffraction, and electron energy loss spectrometry (EELS) in the TEM. The nanowires are polycrystalline with high aspect-ratio grains, and there is evidence of internal localized strain fields. The Bi-Al 2O3 interface in the arrays is compositionally abrupt, with a narrow interphase region dominated by Bi-O bonding. Low-loss EELS studies indicate that the volume plasmon loss peak in individual Bi nanowires shifts to higher energy and broadens as the wire diameter decreases from 90 to 35nm. A low-loss excitation is present in spectra from the Bi-Al2O 3 interface that is consistent with an interfacial plasmon excitation. Energy-filtered imaging reveals that the excitation is strongly localized at the interface.; This investigation reveals that nanowire arrays represent a promising path forward for thermoelectric and other potential applications. These results enable an understanding of the relationship between fabrication parameters and the local structure, composition, and electronic excitations in nanowire arrays and will allow for correlation of this information with nanowire array properties.
机译:由支撑基质内的平行,均匀直径的纳米线阵列组成的纳米复合材料具有多种潜在应用。这项工作的重点是两个纳米线阵列系统,氧化铝模板中的铋和碲化铋纳米线。由于热电效率的预期提高和尺寸减小,这些系统都有望用于热电应用。通过将Bi 2 Te 3 电化学沉积到多孔阳极氧化铝模板中制备碲化铋纳米线阵列。已经开发出一种可以生产高密度(〜5×10 9 / cm 2 ),高纵横比(> 1000)的有序纳米线阵列的方法可以在大面积(> 1mm 2 )上使用,这可以对阵列属性进行常规评估,并可以将其整合到现有设备结构中。高空间分辨率表征技术,包括透射电子显微镜(TEM)中的成像,衍射和能量分散光谱,已用于评估阵列中的结构和组成。纳米线是致密的多晶Bi 2 Te 3 多晶,沿线轴有很强的纹理。在孔的底部发现了一个短的(<5μm)富Te组成梯度。此外,已通过在TEM中采用成像,衍射和电子能量损失谱(EELS)在高空间分辨率下评估了压力注入铋纳米线阵列的组成,结构和电子性能。纳米线是具有高纵横比晶粒的多晶,并且有内部局部应变场的证据。阵列中的Bi-Al 2 O 3 界面在成分上是突变的,且窄的相间区域以Bi-O键为主。低损耗EELS研究表明,单个Bi纳米线中的体积等离激元损耗峰转移到更高的能量,并且随着线直径从90nm减小到35nm而变宽。 Bi-Al 2 O 3 界面的光谱中存在低损耗激发,这与界面等离子体激元激发是一致的。能量过滤成像表明,激发强烈地位于界面处。这项研究表明,纳米线阵列代表了热电和其他潜在应用的前途之路。这些结果使人们能够了解制造参数与纳米线阵列中的局部结构,组成和电子激发之间的关系,并将使该信息与纳米线阵列特性相关。

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