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Synthesis, copolymerization studies and 157 nm photolithography applications of 2-trifluoromethylacrylates.

机译:2-三氟甲基丙烯酸酯的合成,共聚研究和157 nm光刻应用。

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摘要

Advances in microelectronic devices have relied heavily on improved photolithographic imaging capabilities. The resolution limit of optical lithography can be improved by lowering the wavelength of exposure light. The latest reduction in exposure wavelength is from 193 nm to 157 nm. The focus of this work is the synthesis, copolymerization studies and lithographic imaging capabilities of 2-trifluoromethylacrylates. Model calculations and gas phase absorbance measurements of model compounds first suggested that these materials would provide suitable transparency at the 157 nm wavelength. Methyl 2-trifluoromethylacrylate was synthesized and aniocically polymerized and variable angle spectroscopic ellipsometry showed that this material had an absorbance that was 1,000 times more transparent than its non-fluorinated analogue. A variety of relatively transparent resist materials based on a 2-trifluoromethylacrylate backbone were synthesized by anionic polymerization, and these materials were successfully imaged at 157 nm. While 2-trifluoromethylacrylates do not undergo homopolymerization with radical initiators, they do radically copolymerize with various norbornenes. Interestingly, these materials exhibit a 2:1 (2-trifluromethacrylate:norbornene) monomer incorporation. This phenomenon was exploited to produce a number of relatively transparent materials that produced positive-tone structures when imaged at the 157 nm wavelength. Kinetic studies were performed to show that the copolymerizations of 2-trifluormethacrylates and norbornene derivatives deviate from the terminal model and follow the penultimate model. Competitive reaction studies using the “mercury method” were performed to demonstrate that substitution of a trifluoromethyl group can indeed effect the reactivity of a propagating radical, lending support to the proposed penultimate model. The structure of the 2-trifluoromethylacrylate propagating radical will also be investigated by electron spin resonance spectroscopy.
机译:微电子设备的进步在很大程度上依赖于改进的光刻成像能力。可以通过降低曝光光的波长来提高光刻的分辨率极限。曝光波长的最新减小是从193 nm到157 nm。这项工作的重点是2-三氟甲基丙烯酸酯的合成,共聚研究和光刻成像能力。模型化合物的模型计算和气相吸收率测量首先表明,这些材料将在157 nm波长处提供合适的透明度。合成了2-三氟甲基丙烯酸甲酯,并进行了阴离子聚合和可变角度光谱椭圆偏振光谱分析,结果表明该材料的吸光度是其非氟化类似物的1,000倍。通过阴离子聚合合成了多种基于2-三氟甲基丙烯酸酯主链的相对透明的抗蚀剂材料,并成功地在157 nm下成像。尽管2-三氟甲基丙烯酸酯不与自由基引发剂进行均聚,但它们确实与各种降冰片烯自由基共聚。有趣的是,这些材料表现出2:1(2-三氟甲基丙烯酸酯:降冰片烯)单体结合。利用这种现象来产生许多相对透明的材料,这些材料在157 nm波长下成像时会产生正电荷结构。动力学研究表明2-三氟甲基丙烯酸酯和降冰片烯衍生物的共聚偏离末端模型并遵循倒数第二个模型。进行了使用“汞法”的竞争性反应研究,结果表明三氟甲基的取代确实可以影响传播的自由基的反应性,从而为提出的倒数第二个模型提供了支持。也将通过电子自旋共振光谱研究2-丙烯酸三氟甲基丙烯酸酯传播基团的结构。

著录项

  • 作者

    Trinque, Brian C.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Chemistry Organic.; Chemistry Polymer.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 p.6097
  • 总页数 225
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 有机化学;
  • 关键词

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