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A study of adhesion of tantalum films at elevated temperatures via advanced synchrotron techniques.

机译:通过先进的同步加速器技术研究钽膜在高温下的粘附性。

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摘要

Tantalum films are subjected to elevated temperatures in many of their diverse applications due to use or post-deposition processing. Thus, response to elevated temperature must be avoided or incorporated into the selection and design of a coating for a particular application. The evolution of stress, morphology, composition, and microstructure were studied in dc magnetron sputtered Ta coatings on Si (100) during one hour thermal tests at 600°C in air, with the goal of relating as-deposited film characteristics to their elevated-temperature stability. Morphology, microstructure, and impurity content of the as-deposited films were controlled by adjusting the Ar deposition pressure over a range of 2–18 mTorr. Films' microstructure, phase content, morphology, and composition were assessed with x-ray diffraction, atomic force microscopy, scanning electron microscopy, and Rutherford backscattering spectrometry. An analytical method was developed which allowed the instantaneous curvature of the substrates, and therefore the stress in the overlaying coatings, to be determined using transmission Laue diffraction topography. This technique was used for in situ, real-time observations of film delamination and stress evolution during thermal testing.; Coatings deposited at “low” (2–5 mTorr), “intermediate” (6–7 mTorr), and “high” (8–18 mTorr) pressures exhibited severe, moderate, and no delamination, respectively. These results were explained by the attendant stress data, which indicated the development of high (≤3.8 GPa), moderate (≤2 GPa), and low (≤1.4 GPa) maximum compressive stress in the low, intermediate, and high-pressure coatings, respectively. Stress originated mainly from formation of less-dense oxide phases in the films, both in grain boundaries and at the film surface. All films converted to orthorhombic Ta2O5 during the thermal test, with a systematic increase in amorphous content with increasing deposition pressure. Disparities in stress evolution and attendant adhesive performance between high and low-pressure coatings were explained by large variations in as-deposited morphology and impurity content. Films deposited at high pressures possessed a voided zone 1 morphology (∼67% dense) and up to 40 at.% O, which allowed them to better accommodate oxide formation during thermal testing. Low-pressure films exhibited dense zone T morphology (up to 80% dense) and fewer impurities, such that oxidation created high delamination-inducing compressive stresses.
机译:由于使用或沉积后处理,钽膜在其许多不同的应用中都经受高温。因此,必须避免对高温的响应或将其纳入用于特定应用的涂层的选择和设计中。在600°C的空气中进行一小时的热测试期间,研究了在Si(100)上的直流磁控溅射Ta涂层中应力,形态,组成和微观结构的演变,目的是将沉积态薄膜的特性与其升高的温度相关联。温度稳定性。通过在2–18 mTorr的范围内调整Ar沉积压力,控制沉积薄膜的形貌,微观结构和杂质含量。用X射线衍射,原子力显微镜,扫描电子显微镜和卢瑟福背散射光谱法评估薄膜的微观结构,相含量,形态和组成。开发了一种分析方法,该方法允许使用透射劳厄衍射形貌确定基材的瞬时曲率,从而确定覆盖涂层中的应力。该技术用于原位,实时观察热测试过程中薄膜的分层和应力变化。在“低”(2–5 mTorr),“中”(6–7 mTorr)和“高”(8–18 mTorr)压力下沉积的涂层分别显示出严重,中度和无分层。这些结果由附带的应力数据解释,这些数据表明在低,中和高压涂层中出现了最大(≤3.8GPa),中等(≤2GPa)和低(≤1.4GPa)最大压缩应力。 , 分别。应力主要源自在晶界和膜表面上在膜中形成密度较小的氧化物相。在热测试过程中,所有薄膜均转变为正交晶形的Ta 2 O 5 ,随着沉积压力的增加,非晶态含量有系统地增加。高压涂层和低压涂层之间的应力演变差异以及随之而来的粘合性能是由沉积态和杂质含量的巨大差异所解释的。在高压下沉积的薄膜具有空洞的1区形态(约67%的密度)和高达40 at。%的O,这使它们可以更好地适应热测试期间的氧化物形成。低压膜表现出致密的区域T形态(致密度高达80%)和更少的杂质,因此氧化产生了高分层诱导压应力。

著录项

  • 作者

    French, Benjamin Lewis.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 150 p.
  • 总页数 150
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:45:51

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