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High power aluminum gallium nitride based deep UV LED Lamps: Design, fabrication and characterization.

机译:基于大功率氮化铝镓的深紫外LED灯:设计,制造和表征。

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摘要

Deep ultraviolet light sources wavelength ranging from 250 - 365 nm are used in many applications including water/air purification, analytical scientific instrumentation, bio-agent detection systems, and emerging medical instrumentation. Current UV-LEDs are limited in the market penetration due to the relatively low output power and quantum efficiency despite their inherent benefits of low cost, small size, and low power consumption.;In this dissertation, innovative device fabrication idea and approaches have been made to develop next generation deep UV LED Lamp technology by using micro-pixel based area scalability to Monolithic-Macro Lamp, multi-chip interconnected large area DUV Lamp, lateral injection thin-film (LTF) DUV LED process development.
机译:波长范围为250-365 nm的深紫外光源用于许多应用,包括水/空气净化,分析科学仪器,生物制剂检测系统和新兴医疗仪器。尽管其固有的低成本,小尺寸和低功耗的优点,但由于其相对较低的输出功率和量子效率,目前的UV-LED在市场渗透方面受到了限制。;本文提出了创新的器件制造思想和方法通过使用基于微像素的面积可扩展性来开发下一代深紫外LED灯技术,该技术可用于单片微距灯,多芯片互连大面积DUV灯,横向注入薄膜(LTF)DUV LED工艺开发。

著录项

  • 作者

    Hwang, Seongmo.;

  • 作者单位

    University of South Carolina.;

  • 授予单位 University of South Carolina.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 64 p.
  • 总页数 64
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:45:42

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