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Quantitative structure determination in transmission electron microscopy by means of the S-state model.

机译:透射电子显微镜中的定量结构测定,借助S状态模型进行。

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摘要

Quantitative high resolution transmission electron microscopy (HREM) has the unique ability to determine atomistic details on a local scale and this with high precision. This is necessary to understand the relation between the properties and structure of nano materials. The physical and chemical properties of nano materials are determined by their local structure. A better understanding of these relations will allow in the future designing new materials with interesting properties for industrial applications. In case of a quantitative treatment, HREM images are regarded as data planes and a model for the electron object interaction and the imaging in the electron microscope is needed. This model has parameters like atom column positions, which are unknown and has to be determined from the experiment. This can be done by model based fitting at the HREM images using a criterion. The research group EMAT (Electron Microscopy for Materials research) of the University of Antwerp has experience with modelling of the electron object interaction and the imaging in the electron microscope. Building on this experience a simple model for the electron object interaction, namely the S-state model is presented and optimised. This model allows determining the local structure with high precision. Besides that a simple and accurate method was developed to characterise the imaging in the electron microscope. Given these two new techniques, industrial interesting materials were studied like “colossal magneto resistance” La0.9Sr0.1 MnO3-SrTiO3 thin films grown on a substrate and Al2CuMg precipitates in an Al matrix.
机译:高分辨率高分辨率透射电子显微镜(HREM)具有独特的能力,可以在局部范围内高精度确定原子细节。这对于理解纳米材料的特性和结构之间的关系是必要的。纳米材料的物理和化学性质取决于其局部结构。对这些关系的更好理解将使将来可以设计出具有有趣特性的新材料,以用于工业应用。在进行定量处理的情况下,将HREM图像视为数据平面,并且需要用于电子对象相互作用和电子显微镜中成像的模型。该模型具有像原子列位置这样的参数,这些参数是未知的,必须根据实验确定。这可以通过使用准则对HREM图像进行基于模型的拟合来完成。安特卫普大学的EMAT研究小组(材料电子显微镜研究)在建立电子对象相互作用和在电子显微镜中成像方面具有丰富的经验。在此经验的基础上,提出并优化了电子对象相互作用的简单模型,即S状态模型。该模型允许以高精度确定局部结构。除此之外,还开发了一种简单而准确的方法来表征电子显微镜中的成像。有了这两种新技术,就对工业上有意义的材料进行了研究,例如“大磁阻” La 0.9 Sr 0.1 MnO 3 -SrTiO 3在基板上生长的薄膜和Al 2 CuMg在Al基体中沉淀。

著录项

  • 作者

    Geuens, Philippe.;

  • 作者单位

    Universitaire Instelling Antwerpen (Belgium).;

  • 授予单位 Universitaire Instelling Antwerpen (Belgium).;
  • 学科 Physics Atomic.; Engineering Materials Science.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 196 p.
  • 总页数 196
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 分子物理学、原子物理学;工程材料学;
  • 关键词

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