Microstructure of nitride semiconductors for ultra-violet light emitters.

摘要

Group III-nitride semiconductors are important materials for the fabrication of light-emitting-diodes (LEDs) and laser diodes operating in the blue-ultraviolet region. While their unique physical properties have made it possible to fabricate high-efficiency blue devices, the ultraviolet (UV) counterparts face many challenges. High-performance, nitride-based UV-LEDs should revolutionize the general lighting technology. In the near future, fluorescent bulbs are expected to be replaced by long-life and compact-size UV-LEDs coated with phosphors. This dissertation addresses the challenges facing the development of such UV-emitting nitride semiconductor materials.; Three critical issues need to be resolved in order to fabricate high-performance UV-LEDs based on aluminum gallium nitride (AlGaN) alloys: (a) the growth of crack-free AlGaN films, (b) the elimination of crystalline defects, and (c) control of doping. In order to address these issues, epitaxy on a new substrate, ZrB2, has been studied. This substrate is closely matched to AlGaN and permits minimization of residual strain due to lattice and thermal-expansion mismatch and thus avoids the formation of cracks. The growth of crack-free AlGaN using facet-controlled epitaxial lateral overgrowth has also been studied. Plastic relaxation mechanism of mismatch strain has been understood by detailed characterization of the microstructure. The defect density has been reduced by more than one order of magnitude using these approaches, with a significant improvement in the UV-LEDs' efficiency. Distinct dopant incorporation behavior has been observed in lateral overgrowth. The effects of silicon doping on the optical properties and microstructure of AlGaN/GaN quantum wells have also been investigated. These studies have resulted in significant improvement of UV-LEDs' performance. Finally, recommendations for further work are made.