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Multiscale simulation of defect mechanism in crystalline materials.

机译:晶体材料缺陷机理的多尺度模拟。

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摘要

Numerical simulations were performed on the mesoscale and nanoscale, in order to investigate how the localized nature of a deformation field induces nucleation and affects the motion of dislocations. The applications of different simulation techniques to provide information that can be correlated with, or can shed light on, experimentally observed phenomena were investigated.; An atomistic analysis of nanoindentation using molecular statics was undertaken. The simulation was within the two-dimensional framework involving pair molecular interactions in single-crystal films having a close-packed lattice structure. Attention was devoted to characterizing the nucleation of dislocations in response to indentation loading. The location of subsurface nucleation was found to coincide with the maximum resolved shear strain along the slip directions. A unique critical strain value appears to exist for initiating nano-scale plasticity in a perfect crystal under indentation. The effects of residual strain and existing material defects on the nucleation process was also investigated. It was found that residual tensile strain enhances the nucleation process and residual compressive strain delays it. Vacancies in the crystal act as stress concentration points and nucleation sites.; Dislocation dynamics simulations were carried out to study the cyclic stress-strain response of crystals containing misfit particles. The strength differential, manifested by the difference in the magnitudes of tensile and compressive flow strength during continuous loading, is examined. The computational model consists of a spherical particle and a single Frank-Read source in a specified slip plane inside a face-centered-cubic crystal. Attention is devoted to the dislocation glide behavior affected by the misfit elastic field, even when the slip plane does not intersect the particle. The multiplication of dislocation from the single source, the formation of pile-up loops as well as the unraveling of the loops upon reversed loading were all captured by the simulation. It was observed that the existence of a misfit particle gives rise to strength differential, a phenomenon of fundamentally different nature with regard to the widely recognized Bauschinger effect. The "back stress" concept was employed to analyze the simulation result. The effects of particle size and applied strain rate on the overall strength differential were also examined.
机译:为了研究形变场的局部性质如何引起形核并影响位错运动,在中尺度和纳米尺度上进行了数值模拟。研究了不同模拟技术在提供与实验观察到的现象相关或可以揭示的信息方面的应用。使用分子静力学进行了纳米压痕的原子分析。模拟是在二维框架内进行的,该框架涉及具有紧密堆积晶格结构的单晶膜中的成对分子相互作用。人们关注于表征压痕载荷作用下位错的形核。发现地下成核的位置与沿滑动方向的最大分辨剪切应变一致。似乎存在一个独特的临界应变值,用于在压痕下引发完美晶体中的纳米级可塑性。还研究了残余应变和现有材料缺陷对成核过程的影响。发现残余拉伸应变增强了成核过程,而残余压缩应变则延迟了它。晶体中的空位充当应力集中点和成核位置。进行了位错动力学模拟,以研究含有失配粒子的晶体的循环应力-应变响应。检查强度差异,该差异由连续加载过程中拉伸和压缩流动强度的大小差异表示。计算模型由球形粒子和面心立方晶体内指定滑移平面中的单个Frank-Read源组成。即使滑移平面不与粒子相交,也要注意受失配弹性场影响的位错滑移行为。模拟捕获了来自单一源的位错的乘法,堆积环的形成以及反向加载时环的散开。据观察,失配粒子的存在引起强度差,这是就广泛认可的鲍辛格效应而言本质上本质上不同的现象。采用“背应力”概念来分析仿真结果。还检查了粒度和施加的应变速率对总强度差的影响。

著录项

  • 作者

    Leger, Ronald Wayne.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Engineering Mechanical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 128 p.
  • 总页数 128
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;工程材料学;
  • 关键词

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