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Photoconductivity characterization of single-walled carbon nanotube phototransistors.

机译:单壁碳纳米管光电晶体管的光电导特性。

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摘要

Understanding electronic interactions in nano-scale devices is of crucial importance because only through furthering the knowledge of their electronic operations can progress be made in the field. Carbon nanotube devices, the current nano-device leaders, are prime examples of circuits that can benefit from further electronic studies. Without a better understanding of the entire device operation, the success of carbon nanotube electronics may be limited to the laboratory.; The fundamental issue that needs to be addressed is the fact that on a nanometer scale, everything the device is in contact with will play a role in its operation. A carbon nanotube cannot be thought of as the only subject of a carbon nanotube device study. Only by examining the interactions with the materials surrounding the nanotube can a complete model be prepared.; In this dissertation, it is shown that the metal - nanotube interface plays a large role in the structure and even the existence of electronic properties measured in nanotube devices. By performing photocurrent measurements on carbon nanotube devices it was discovered that they have the ability to function as nanoscale phototransistors with strong dependencies on contact materials. With the proper contact materials, strong photocurrent amplification is possible, making carbon nanotube phototransistors very sensitive photodetectors.; Analysis of the carbon nanotube phototransistor's photoconducting spectra shows signs of tunneling-assisted photoexcitation. The spectral photoconductivity is heavily dependant upon the choice of contact material, showing robust photoconductivity for some contact materials, while showing negligible photoconductivity for others. It is concluded that by changing the metal - nanotube interfaces, one can tailor the nanotube device properties.
机译:了解纳米级设备中的电子相互作用至关重要,因为只有通过进一步了解其电子操作知识才能在该领域取得进展。碳纳米管器件是当前纳米器件的领导者,是可以从进一步的电子研究中受益的电路的主要示例。在没有更好地了解整个设备操作的情况下,碳纳米管电子设备的成功可能仅限于实验室。需要解决的基本问题是,在纳米尺度上,设备所接触的所有事物都将在其运行中发挥作用。不能将碳纳米管视为碳纳米管器件研究的唯一主题。只有通过检查与纳米管周围材料的相互作用,才能制备出完整的模型。本文表明,金属-纳米管界面在纳米管器件的结构甚至电子性能的存在中起着重要作用。通过对碳纳米管器件进行光电流测量,发现它们具有充当纳米级光电晶体管的能力,并且对接触材料有很强的依赖性。使用适当的接触材料,可能会产生很强的光电流放大,从而使碳纳米管光电晶体管非常灵敏。碳纳米管光电晶体管的光电导光谱分析显示出隧道辅助光激发的迹象。光谱光电导率在很大程度上取决于接触材料的选择,对于某些接触材料显示出稳定的光电导性,而对于其他接触材料显示出可忽略的光电导性。结论是,通过改变金属-纳米管界面,可以定制纳米管器件的性能。

著录项

  • 作者

    Narkis, Todd Robert.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 145 p.
  • 总页数 145
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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