Quantum well structures for plasma instability-based terahertz radiation sources.

摘要

This thesis is a theoretical study of the electron transport and response properties of epitaxially grown, low-dimensional semiconductor quantum well heterostructures, under steady-state, current driven (nonequilibrium) conditions. These structures operate in the Terahertz (THz) frequency and submillimeter wavelength range, and are the leading candidates for compact, coherent sources of THz radiation. This work is divided into two parts: Part I consists of an analytical study of the individual quantum well units, and the tunneling transmission characteristics, for which reasonably accurate algebraic expressions are obtained. An underlying philosophy of this work is the desire to describe each of the key components involved, independently, through these simple analytical expressions. In Part II the numerical study of the transport and radiation response of the quantum well structures specially designed to generate THz radiation based on the plasma instability concept is presented. Several models are proposed which describe the overall electron transport and which determine the underlying nonequilibrium steady state. In particular, the key features of the experimental current-voltage (IV) curves for such structures are explained, and the corresponding response properties are determined. The modeling and simulation of these potential optoelectronic devices is a crucial tool for elucidating the precise mechanisms and interplay of the many microscopic processes which give rise to the observed behavior. Key features of the radiation response arise from the intersubband plasma instability which occurs due to the resonant interaction of an emission and an absorption mode, and these features are compared with the experimental observations.