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Modeling and design techniques for improved delay, power and signal integrity in nanoscale VLSI.

机译:用于改善纳米级VLSI中的延迟,功率和信号完整性的建模和设计技术。

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摘要

The scaling of integrated circuit (IC) technologies to the nanometer regime has resulted in various nanometer scale effects such as interconnect delay, cross-coupling, on-chip inductance, signal integrity, leakage power dissipation, process variation, and yield degradation. These effects can have an adverse impact on integrated circuit performance, power consumption and reliability. These nanometer effects will continue to get worse in future technologies and are expected to become a limiting factor in CMOS (Complementory Metal Oxide Semiconductor) scaling.; This dissertation concentrates on interconnect, leakage power and process variation related issues in nanometer IC design. The dissertation makes two fundamental contributions regarding these issues. First, advanced modeling solutions are developed that enable integration of these effects in the IC design flow. Second, novel design approaches are proposed to minimize the negative impact of these effects on circuit performance and reliability.; A main component of the dissertation focuses on interconnect modeling and design. Efficient closed form interconnect models are developed for timing and noise driven physical design optimization tools. The impact of back-end process variations on interconnect performance is investigated and efficient statistical interconnect models are proposed. The dissertation also focuses on modeling self and mutual inductive effects in on-chip interconnects. A coupling noise model and a gate output waveform model for on-chip RLC interconnects are developed. From a design perspective, a technique to deal with signal integrity issues called dynamic clamping is proposed. This approach is effective in reducing noise and inductive effects in high-speed RLC global buses. A technique called optimal inductance is also developed that reduces the delay of global interconnects by exploiting the faster transition times observed due to inductance.; In addition to interconnect issues, this work also addresses the issue of growing leakage currents and their impact on future device scaling. Novel design solutions are proposed that can be used to reduce leakage power consumption without trading off performance. Various global signaling approaches targeted towards reducing leakage in power hungry repeaters are discussed. It is shown that the proposed skewed pulsed bus configuration can provide nearly 25% reduction in active mode leakage and 99X reduction in standby mode leakage while enabling ∼20% improvement in performance.; Finally, process variation and its impact on parametric yield is analyzed. An analytical model is developed that can be used to predict parametric yield under given power and frequency requirements. The proposed model is then used for optimal supply voltage selection that results in yield maximization.
机译:集成电路(IC)技术向纳米尺度的扩展已导致各种纳米尺度的影响,例如互连延迟,交叉耦合,片上电感,信号完整性,泄漏功率耗散,工艺变化和成品率下降。这些影响可能会对集成电路性能,功耗和可靠性产生不利影响。这些纳米效应将在未来的技术中继续恶化,并有望成为CMOS(互补金属氧化物半导体)定标的限制因素。本文主要研究纳米集成电路设计中与互连,泄漏功率和工艺变化有关的问题。论文对这些问题做出了两个基本的贡献。首先,开发了先进的建模解决方案,可将这些效果集成到IC设计流程中。其次,提出了新颖的设计方法以最小化这些影响对电路性能和可靠性的负面影响。论文的主要内容是互连建模与设计。针对时序和噪声驱动的物理设计优化工具,开发了有效的封闭形式互连模型。研究了后端工艺变化对互连性能的影响,并提出了有效的统计互连模型。本文还着重于对片上互连中的自感和互感效应进行建模。开发了片上RLC互连的耦合噪声模型和栅极输出波形模型。从设计的角度出发,提出了一种解决信号完整性问题的技术,称为动态钳位。这种方法可有效减少高速RLC全局总线中的噪声和电感效应。还开发了一种称为最佳电感的技术,该技术通过利用因电感而观察到的更快的转换时间来减少全局互连的延迟。除了互连问题之外,这项工作还解决了泄漏电流不断增长的问题及其对未来设备扩展的影响。提出了新颖的设计解决方案,该解决方案可用于减少泄漏功耗而无需权衡性能。讨论了旨在减少耗电中继器中的泄漏的各种全局信令方法。结果表明,所提出的偏斜脉冲总线配置可以使活动模式泄漏减少近25%,而待机模式泄漏减少99倍,同时使性能提高约20%。最后,分析了工艺变化及其对参数产量的影响。开发了一种分析模型,该模型可用于预测给定功率和频率要求下的参数产量。然后,将所提出的模型用于最佳电源电压选择,从而导致良率最大化。

著录项

  • 作者

    Agarwal, Kanak B.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 266 p.
  • 总页数 266
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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