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Low-power multi-GHz silicon germanium FPGAs for reconfigurable computing.

机译:用于可重构计算的低功耗多GHz硅锗FPGA。

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摘要

The Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) is the first successful bandgap engineered device. It has a comparable performance to a Gallium Arsenide (GaAs) Radio Frequency (RF) device, but it can be fabricated at a significantly lower cost. The smaller base bandgap of SiGe compared to Si enhances electron injection, producing higher current gain for the same base doping level compared to Si devices. SiGe HBT and Si CMOS can be grown over the same substrate because these processes have strict compatibility with existing CMOS tool sets and metallization schemes. SiGe HBT has emerged from research to become a leading contender in the RF market. State-of-art of SiGe can deliver: (1) fT in excess of 207 GHz; (2) minimum noise figure; (3) cryogenic operation; (4) reliability comparable to Si.; The demand for high speed Field Programmable Gate Arrays (FPGAs) has always been on the rise. This was never possible using CMOS as the basic device. People were able to achieve frequencies in the range of 10--500 MHz using CMOS. The availability of SiGe HBT devices has opened the door for Gigahertz FPGAs. The integration of these high-speed SiGe HBTs and low power CMOS gives a significant speed advantage to SiGe FPGAs compared to traditional CMOS FPGAs.; This thesis will concentrate on how to minimize power consumption in SiGe BiCMOS mixed-signal FPGAs, and the combination of Analog-Digital Converters (ADCs) and deserializers together with the FPGA. In particular, a description of how to merge circuits to reduce power dissipation will be provided. A new circuit topology will be presented that can effectively achieve a flexible trade-off between power and circuit speed. In addition, the development of an X-pattern decoding logic with shared address and data lines that alleviates the line congestion will be discussed. Beyond this, several deep trench sharing techniques, developed to shrink the layout areas, will be shown. Six SiGe FPGA test chips based on the Xilinx 6200 and Virtex architectures have been fabricated for demonstration using IBM SiGe 5HP, 7HP and 8HP technologies. The design of several high speed FPGA based applications will also be presented.
机译:硅锗(SiGe)异质结双极晶体管(HBT)是第一个成功的带隙工程设计器件。它具有与砷化镓(GaAs)射频(RF)器件相当的性能,但可以以更低的成本制造。与Si相比,SiGe的基带隙更小,可增强电子注入,在相同的基极掺杂水平下产生更高的电流增益。 SiGe HBT和Si CMOS可以在同一衬底上生长,因为这些工艺与现有CMOS工具集和金属化方案具有严格的兼容性。 SiGe HBT已从研究中脱颖而出,成为RF市场的领先竞争者。最先进的SiGe可以提供:(1)超过207 GHz的fT; (2)最小噪声系数; (3)低温运行; (4)可靠性可与Si相媲美;高速现场可编程门阵列(FPGA)的需求一直在增长。使用CMOS作为基本设备是不可能的。人们能够使用CMOS达到10--500 MHz的频率。 SiGe HBT器件的可用性为千兆赫的FPGA打开了大门。与传统的CMOS FPGA相比,这些高速SiGe HBT和低功耗CMOS的集成为SiGe FPGA提供了显着的速度优势。本文将集中讨论如何最大程度地降低SiGe BiCMOS混合信号FPGA的功耗,以及如何将模数转换器(ADC)和解串器与FPGA结合使用。特别地,将提供关于如何合并电路以减少功耗的描述。将提出一种新的电路拓扑,该拓扑可有效实现功率与电路速度之间的灵活折衷。此外,将讨论具有共享地址和数据线的X模式解码逻辑的开发,该逻辑可减轻线的拥塞。除此之外,还将展示几种为缩小布局面积而开发的深沟槽共享技术。已经使用IBM SiGe 5HP,7HP和8HP技术制造了六个基于Xilinx 6200和Virtex架构的SiGe FPGA测试芯片进行演示。还将介绍几种基于FPGA的高速应用程序的设计。

著录项

  • 作者

    Zhou, Kuan.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 179 p.
  • 总页数 179
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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