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Nonlinear Photonic Devices With Subwavelength Dimensions.

机译:具有亚波长尺寸的非线性光子器件。

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摘要

A pair of synthetic methods are presented for describing nonlinear optical phenomena in photonic devices of any size scale and with any degree of refractive-index contrast.;The first method is a general description of nonlinear phenomena in guided-wave devices. By retaining all of the cartesian components of the field implicit assumptions about device dimensions and refractive-index contrast are not made. The method is applied to the study of nonlinear optical phenomena in silicon-on-insulator (SOI) waveguides. Contributions are found to the nonlinear propagation parameters that do not appear in traditional descriptions of nonlinear fiber optics, and are found to become significant as a result of the high index contrast of the SOI material system when device dimensions enter the subwavelength regime. An experimental study of nonlinear polarization effects in SOI waveguides is presented and the theoretical model is used to explain them.;The second method is a general description of nonlinear phenomena in optical resonators. The method makes no assumptions about device dimensions, refractive-index contrast, or the specific cavity structure. It is applied to understanding two different phenomena in resonators and to designing two different devices based on these phenomena. The first phenomenon is the influence of a dynamic refractive-index change on the optical field in a resonator. The resulting frequency shift of the field is proposed as a possible mechanism for implementing a wavelength conversion device, and device design criteria and theoretical performance capabilities are presented. The second phenomenon is the influence of the cross-phase modulation interaction of two resonator modes that results from the Kerr effect. The resulting bistability is proposed as a possible mechanism for implementing a phase-switched optical memory device, and device design criteria and theoretical performance capabilities are presented.
机译:提出了两种合成方法,用于描述任何规模,具有任意折射率对比的光子器件中的非线性光学现象。第一种方法是对导波器件中的非线性现象的一般描述。通过保留该字段的所有笛卡尔分量,就不会对设备尺寸和折射率对比度进行隐式假设。该方法用于研究绝缘体上硅(SOI)波导中的非线性光学现象。发现对非线性传播参数的贡献在非线性光纤的传统描述中没有出现,并且当器件尺寸进入亚波长范围时,由于SOI材料系统的高折射率对比,结果变得非常重要。提出了SOI波导中非线性偏振效应的实验研究,并用理论模型对其进行了解释。第二种方法是对光谐振器中非线性现象的一般描述。该方法不对器件尺寸,折射率对比或特定腔结构进行任何假设。它适用于理解谐振器中的两种不同现象,并基于这些现象设计两种不同的器件。第一种现象是动态折射率变化对谐振器中光场的影响。提出了由此产生的磁场频移,作为实现波长转换设备的可能机制,并提出了设备设计标准和理论性能。第二种现象是由克尔效应引起的两个谐振器模式的交叉相位调制相互作用的影响。提出了产生的双稳态性,作为实现相控光学存储器件的可能机制,并提出了器件设计标准和理论性能。

著录项

  • 作者

    Daniel, Brian Adam.;

  • 作者单位

    University of Rochester.;

  • 授予单位 University of Rochester.;
  • 学科 Physics Optics.;Physics Electricity and Magnetism.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 184 p.
  • 总页数 184
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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