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Simulation of abnormal growth in subgrain structures in deformed materials.

机译:模拟变形材料中亚晶粒结构的异常生长。

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摘要

Abnormal grain growth in subgrain structures was investigated using computer simulation. The results showed that a theory of abnormal grain growth in subgrain structures determined for 2D microstructures is found to also apply to 3D subgrain structures. 3D Monte Carlo simulation results suggest that the probability of abnormal (sub-)grain growth is a function of orientation spread within a grain (measured by grain reference orientation deviation, GROD), which is closely related to the mean misorientation of 3D digital microstructures. When a high angle boundary exists between two subgrain structures, Strain Induced Boundary Migration can occur, leading to inter-granular nucleation, which is most evident for low values of mean misorientation. Using Hughes's empirical relation that quantifies the monotonic increase of mean misorientation with strain, 3D digital microstructures with different GROD values are analogous to microstructures at various strains. Therefore, the mean misorientation is used to estimate the recrystallization nucleus density by extending the probability of abnormal subgrain growth to recrystallization nucleation. Good agreement between the predicted density of new grains by our model and experimental data suggests that a combination of subgrain abnormal growth theory, subgrain size (as a function of stress) and the known monotonic increase in mean misorientation with strain leads to a quantitative prediction of recrystallized grain size. In addition, this work has provided reasonable evidence to help us understand under what circumstances we can expect to observe inter-granular versus intra-granular nucleation of recrystallization.;This work is supported by National Science Foundation under contract DMR-0503049. Computing facilities provided by the Intel Corporation were used for some of the computations.
机译:使用计算机模拟研究了亚晶粒结构中异常晶粒的生长。结果表明,发现为2D微观结构确定的亚晶粒结构中异常晶粒生长的理论也适用于3D亚晶粒结构。 3D Monte Carlo模拟结果表明,异常(亚)晶粒生长的概率是晶粒内取向分布的函数(通过晶粒参考取向偏差GROD来衡量),这与3D数字微结构的平均取向错误密切相关。当两个亚晶粒结构之间存在高角度边界时,会发生应变诱导的边界迁移,从而导致晶间成核,这在平均取向差值较低的情况下最为明显。利用休斯的经验关系来量化平均平均取向错误随应变的单调增加,具有不同GROD值的3D数字微结构类似于各种应变下的微结构。因此,通过将异常亚晶粒长大的可能性扩展到重结晶成核,可以使用平均取向错误来估计重结晶核密度。通过我们的模型和实验数据预测的新晶粒密度之间的良好一致性表明,亚晶粒异常生长理论,亚晶粒尺寸(作为应力的函数)和已知平均单向取向随应变的单调增加相结合,可以定量预测再结晶晶粒尺寸。此外,这项工作还提供了合理的证据来帮助我们理解在什么情况下可以预期观察到晶粒间和晶粒内重结晶的成核。;这项工作得到了美国国家科学基金会根据DMR-0503049合同的支持。某些计算使用了英特尔公司提供的计算工具。

著录项

  • 作者

    Wang, Shengyu.;

  • 作者单位

    Carnegie Mellon University.;

  • 授予单位 Carnegie Mellon University.;
  • 学科 Engineering Mechanical.;Engineering Materials Science.;Engineering Metallurgy.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 166 p.
  • 总页数 166
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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