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A multi-scale method for the prediction of delamination in electronic packages.

机译:用于预测电子包装中分层的多尺度方法。

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摘要

Interfacial delamination, due to the presence of dissimilar material systems, is one of the primary concerns in electronic package design. The present study is focused on delamination at the interface of the epoxy molding compound (EMC) and copper interface. Based on traditional method, the obtained energy with different button shear testing configurations provides no clear indication that the proposed energy parameter could be used as a limiting factor in a strength-based failure criterion.; In order to incorporate the interfacial bonding into the finite element model, an interfacial layer is built at the interface, which has material properties significant different from the bulk EMC and copper substrate. The results presented could be incorporated into a strength-based failure criterion for the prediction of interfacial delamination. And the concept of virtual internal bond (VIB) approach was introduced to complements the interfacial layer model by providing a methodology to evaluate the interfacial material properties.; Atomic force microscopy (AFM) tests were conducted to measure the adhesion force between the EMC and copper substrate, which directly provided the deflection-distance curve. The deflection-distance curve was used to evaluate the energy parameters of the Lennard-Jones potential, which was used to describe the interaction of EMC and copper atoms at the interface. The investigation of the adhesion between the EMC and copper substrate was addressed using MM simulation. The simulation results reveal the interaction behavior between the EMC and copper substrate and provide a qualitative trend which is consistent to the energy curve derived from AFM results. Based on the Lennard-Jones potential, the force-distance curve for each EMC material was derived. The corresponding relation of stress and strain could be extracted from the force-distance curve.; A multi-scale model was built by introducing the concept of VIB in which atomic interactions of the interface can be packed in a hyperelastic solid. The interfacial material properties were input to the layer element at the interface, representing the behavior of the EMC/Cu interface. The interfacial energy was calculated when the shear forces from the button shear tests were applied to the model. All the energies remained almost constant with a small variation when the shear height and angles changed, which could be incorporated into a strength-based failure criterion for interfacial delamination. The proposed criterion was benchmarked by its application in real package models, in which two kinds of packages, SOT#1 and SOT#2, were studied to investigate delamination in the soldering reflow process. Based on the proposed method, the delamination in the two packages could be predicted, which is consistent with the C-SAM result.
机译:由于存在不同的材料系统,界面分层是电子封装设计中的主要问题之一。本研究集中在环氧模塑化合物(EMC)与铜界面的分层上。在传统方法的基础上,采用不同的纽扣剪切测试配置获得的能量并不能清楚地表明所提出的能量参数可以用作基于强度的破坏准则中的限制因素。为了将界面键合并到有限元模型中,在界面处构建了界面层,该界面层的材料特性与整体EMC和铜基板明显不同。提出的结果可以纳入基于强度的破坏准则,以预测界面分层。并引入了虚拟内部键合(VIB)方法的概念,通过提供一种评估界面材料特性的方法来补充界面层模型。进行了原子力显微镜(AFM)测试,以测量EMC与铜基板之间的粘附力,这直接提供了挠曲距离曲线。挠度-距离曲线用于评估Lennard-Jones势能的能量参数,该参数用于描述EMC和界面处铜原子的相互作用。使用MM模拟解决了EMC与铜基板之间的粘附性研究。仿真结果揭示了EMC与铜基板之间的相互作用行为,并提供了与AFM结果得出的能量曲线一致的定性趋势。基于Lennard-Jones势,得出每种EMC材料的力-距离曲线。应力-应变的对应关系可以从力-距离曲线中提取。通过引入VIB的概念建立了多尺度模型,其中界面的原子相互作用可以堆积在超弹性固体中。界面材料属性在界面处输入到层元素,代表EMC / Cu界面的行为。当将来自按钮剪切测试的剪切力应用于模型时,计算界面能。当剪切高度和角度改变时,所有能量几乎保持恒定不变,变化很小,可以将其纳入基于强度的界面分层破坏准则中。该标准以其在实际封装模型中的应用为基准,在其中研究了两种封装SOT#1和SOT#2,以研究回流焊接过程中的分层。基于所提出的方法,可以预测两个包装中的分层,这与C-SAM结果一致。

著录项

  • 作者

    Fan, Haibo.;

  • 作者单位

    Hong Kong University of Science and Technology (People's Republic of China).;

  • 授予单位 Hong Kong University of Science and Technology (People's Republic of China).;
  • 学科 Engineering Electronics and Electrical.; Engineering Packaging.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 171 p.
  • 总页数 171
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;包装工程;
  • 关键词

  • 入库时间 2022-08-17 11:42:51

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