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Electrodeposition of high aspect ratio indium antimonide nanowires on porous anodic alumina (PAA) membranes.

机译:高纵横比的锑化铟铟纳米线在多孔阳极氧化铝(PAA)膜上的电沉积。

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摘要

In the recent past, there has been an increasing interest in nanostructured III-V semiconductor materials due to their potential applications including nanowire transistors, molecular electronics and thermoelectric devices. In particular, Indium Antimonide (InSb) has generated a lot of interest due to its direct band gap (0.18 eV), very high electron mobility, and ballistic lengths of up to 700 nm at 300K. Compared to the regular methods of fabricating InSb nanowires, such as vapor-liquid-solid (VLS) and physical vapor deposition (PVD), the process of electrodeposition on porous anodic alumina (PAA) templates has the ability to synthesize higher aspect ratio nanowires that is not possible using PVD (due to pore closure effect). Moreover, using the VLS method may cause the incorporation of the catalyst into the nanowires, which may be difficult to remove. This is most likely the first time the electrodeposition of InSb nanowires with an average diameter range of 15-20 nm has ever been demonstrated and reported. In this work, high aspect ratio InSb nanowires have been successfully electrodeposited into a PAA template. The template was fabricated by two-step anodization of an aluminum layer, that had been deposited on a silicon wafer with a thin layer of titanium (adhesion promoter), sandwiched between the two. The template exhibited average pore diameters in the range of 15 - 20 nm. The insulating oxide barrier layer at the pore bottom is usually removed by a plasma etching process before the electrodeposition step. However, for this study a relatively new technique of applying a reverse bias anodization, was optimized and used to break through the oxide barrier layer. The InSb nanowires were then synthesized in the PAA templates using the electrodeposition process. Finally, the physical and material properties of the nanowires were characterized using Field Emission Scanning Electron Microscopy and Raman Spectroscopy.
机译:在最近的过去,由于其潜在的应用包括纳米线晶体管,分子电子学和热电器件,人们对纳米结构的III-V半导体材料越来越感兴趣。尤其是,锑化铟(InSb)由于其直接带隙(0.18 eV),非常高的电子迁移率以及300K时的弹道长度高达700 nm而引起了广泛的关注。与制造InSb纳米线的常规方法(例如气液固(VLS)和物理气相沉积(PVD))相比,在多孔阳极氧化铝(PAA)模板上进行电沉积的过程具有合成高长宽比的纳米线的能力,使用PVD是不可能的(由于闭孔效果)。此外,使用VLS方法可能导致催化剂掺入纳米线,这可能很难去除。这很可能是首次证实和报道了平均直径范围为15-20 nm的InSb纳米线的电沉积。在这项工作中,高长宽比的InSb纳米线已成功地电沉积到PAA模板中。通过对铝层进行两步阳极氧化来制作模板,该铝层已沉积在夹在两者之间的带有薄薄钛层(粘合促进剂)的硅晶片上。该模板显示出15-20nm范围内的平均孔径。通常在电沉积步骤之前通过等离子体蚀刻工艺去除孔底部的绝缘氧化物阻挡层。然而,对于本研究,一种相对较新的应用反向偏置阳极氧化的技术已得到优化,并用于突破氧化物阻挡层。然后使用电沉积工艺在PAA模板中合成InSb纳米线。最后,使用场发射扫描电子显微镜和拉曼光谱对纳米线的物理和材料特性进行了表征。

著录项

  • 作者

    Mohammad, Asaduzzaman.;

  • 作者单位

    Purdue University.;

  • 授予单位 Purdue University.;
  • 学科 Engineering Electronics and Electrical.Nanotechnology.
  • 学位 M.S.E.C.E.
  • 年度 2010
  • 页码 80 p.
  • 总页数 80
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:37:09

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