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Any-Cap Low Dropout Voltage Regulator.

机译:无电容低压差稳压器。

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摘要

Power management plays a very important role in the current electronics industry. Battery powered and handheld applications require novel power management techniques to extend the battery life. Most systems have multiple voltage regulators to provide power sources to the different circuit blocks and/or sub-systems. Some of these voltage regulators are low dropout regulators (LDOs) which typically require output capacitors in the range of 1's to 10's of muF. The necessity of output capacitors occupies valuable board space and can add additional integrated circuit (IC) pin count. A high IC pin count can restrict LDOs for system-on-chip (SoC) solutions.;The presented research gives the user an option with regard to the external capacitor; the output capacitor can range from 0--1muF for a stable response. In general, the larger the output capacitor, the better the transient response. Because the output capacitor requirement is such a wide range, the LDO presented here is ideal for any application, whether it be for a SoC solution or stand-alone LDO that desires a filtering capacitor for optimal transient performance. The LDO architecture and compensation scheme provide a stable output response from 1mA to 200mA with output capacitors in the range of 0--1muF. A 2.5V, 200mA any-cap LDO was fabricated in a proprietary 1.5mum BiCMOS process, consuming 200muA of ground pin current (at 1mA load) with a dropout voltage of 250mV.;Experimental results show that the proposed any-cap LDO exceeds transient performance and output capacitor requirements compared to previously published work. The architecture also has excellent line and load regulation and less sensitive to process variation. Therefore, the presented any-cap LDO is ideal for any application with a maximum supply rail of 5V.
机译:电源管理在当前的电子行业中扮演着非常重要的角色。电池供电和手持式应用需要新颖的电源管理技术来延长电池寿命。大多数系统具有多个稳压器,以为不同的电路块和/或子系统提供电源。这些稳压器中有一些是低压差稳压器(LDO),通常需要在1 µs至10 µsμF范围内的输出电容器。输出电容器的必要性占用了宝贵的电路板空间,并可能增加额外的集成电路(IC)引脚数。高IC引脚数会限制LDO用于片上系统(SoC)解决方案。本研究为用户提供了有关外部电容器的选择;输出电容器的范围可以在0--1μF之间,以获得稳定的响应。通常,输出电容器越大,瞬态响应越好。由于输出电容器的要求范围很广,因此这里介绍的LDO非常适合任何应用,无论是SoC解决方案还是需要滤波电容器以实现最佳瞬态性能的独立LDO。 LDO架构和补偿方案可在0--1μF的范围内提供1mA至200mA的稳定输出响应。 2.5V,200mA的任意电容LDO采用专有的1.5mum BiCMOS工艺制造,消耗了200μA的接地引脚电流(在1mA负载下),压差为250mV;实验结果表明,所提出的任意电容的LDO超过了瞬态电压性能和输出电容器要求与以前发表的工作相比。该架构还具有出色的线路和负载调节能力,并且对过程变化不那么敏感。因此,提出的任意电容LDO非常适合最大电源轨为5V的任何应用。

著录项

  • 作者

    Topp, Matthew.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2012
  • 页码 88 p.
  • 总页数 88
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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