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Nanomechanics of one-dimensional nanostructures.

机译:一维纳米结构的纳米力学。

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摘要

Silicon carbide nanowires were synthesized via the vapor-liquid-solid (VLS) mechanism by plasma enhanced chemical vapor deposition using orthocarborane (C2B10H12) as the molecular precursor. Nickel boride was the catalyst used to initiate VLS growth, however, high resolution transmission electron microscopy and selected area diffraction revealed that the catalyst transformed to nickel silicide. The source of silicon was determined to be the substrate. The orthocarborane partial pressure dictated whether the catalyst transformed from nickel boride to nickel silicide. In the event that the catalyst did not transform to nickel silicide, boron carbide nanowires were grown instead of silicon carbide. The factors affecting the transformation of the catalyst are the concentrations of B and Si in the vapor and the chemical potentials of the liquid phases of nickel boride and nickel silicide. A temperature gradient within the catalyst is proposed to explain the formation of the frequently observed bi-phase amorphous/crystalline silicon carbide nanowires.; Silica nanowires were synthesized also via the VLS mechanism by chemical vapor deposition using a mixture of silicon and silicon oxide as the precursor. Deposited Iron particles on a silicon substrate served as the catalyst of the growth. Scanning electron microscopy analysis showed the nanowires grew up to tens of microns with diameters ranging from 50 to 200 nm. Selected area diffraction in the transmission electron microscopy verified the amorphous structure of the nanowires. Moreover, energy dispersive spectroscopy and x-ray and XPS analysis suggest that the as-grown nanowires are SiO2.; Nanowires could be potentially useful in designing nanomechanical systems which lead to the interest in understanding their mechanical properties. In this dissertation, the technique of digital pulse force microscopy (DPFM) has been used to analyze the mechanical properties of suspended SiC nanowires. The SiC nanowires were suspended on a silicon grating with trenches of 1.5 micron width and 1 micron height. The silicon grating was coated with a thin thermo-polymer layer to adhere the nanowires to the substrate. Deflection measurements and hence calibrated force-distance curves along the length of the nanowire were obtained. The resultant curves were fitted to various classical beam deflection models to understand the behavior of the nanowire during the deflection measurement and then to compute the elastic modulus for the nanowire. The measurement was conducted on nanowires with different diameters and suspended lengths. The average elastic modulus for the SiC nanowires in this experiment was 71 GPa for the simple support model. Detailed analysis of deflection measurements demonstrates the danger of depending on midpoint bending measurements which give the DPFM superiority over typical force-distance measurement in AFM contact mode. This technique also minimizes the lateral force applied to the nanowires during the typical contact mode.
机译:碳化硅纳米线是通过气相-液体-固体(VLS)机理,通过等离子体增强化学气相沉积法,以原碳硼烷(C2B10H12)为分子前体合成的。硼化镍是用于引发VLS生长的催化剂,但是,高分辨率透射电子显微镜和选定的区域衍射表明,该催化剂已转化为硅化镍。确定硅源为衬底。原碳硼烷分压决定了催化剂是否从硼化镍转变为硅化镍。如果催化剂没有转变成硅化镍,则生长碳化硼纳米线而不是碳化硅。影响催化剂转化的因素是蒸气中B和Si的浓度以及硼化镍和硅化镍的液相的化学势。提出了催化剂内的温度梯度以解释经常观察到的双相非晶/结晶碳化硅纳米线的形成。二氧化硅纳米线也通过VLS机理通过使用硅和氧化硅的混合物作为前体的化学气相沉积来合成。在硅基板上沉积的铁颗粒充当了生长的催化剂。扫描电子显微镜分析显示,纳米线长至数十微米,直径范围为50至200 nm。透射电子显微镜中的选定区域衍射验证了纳米线的非晶结构。此外,能量色散光谱法和X射线和XPS分析表明,所生长的纳米线是SiO 2。纳米线可能在设计纳米机械系统中可能有用,这会引起人们对了解其机械性能的兴趣。本文采用数字脉冲力显微镜技术(DPFM)对悬浮SiC纳米线的力学性能进行了分析。将SiC纳米线悬挂在具有1.5微米宽度和1微米高度的沟槽的硅光栅上。硅光栅上涂有一层薄薄的热聚合物层,以将纳米线粘附到基板上。获得了沿着纳米线的长度的挠曲测量结果以及因此校准的力-距离曲线。将所得曲线拟合到各种经典的射束偏转模型,以了解在偏转测量期间纳米线的行为,然后计算纳米线的弹性模量。在具有不同直径和悬浮长度的纳米线上进行测量。对于简单支撑模型,此实验中SiC纳米线的平均弹性模量为71 GPa。挠度测量的详细分析显示了依赖于中点弯曲测量的危险,这使得DPFM优于AFM接触模式下的典型力距测量。该技术还使在典型接触模式期间施加到纳米线的横向力最小化。

著录项

  • 作者

    Alkhateeb, Abdullah.;

  • 作者单位

    University of Idaho.;

  • 授予单位 University of Idaho.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 133 p.
  • 总页数 133
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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