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AC impedance spectroscopy on copper phthalocyanine thin films.

机译:铜酞菁薄膜上的交流阻抗谱。

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摘要

Impedance spectroscopy is used to study copper phthalocyanine thin films in order to disentangle the contributions of the crystal and the unavoidable grain boundaries. The spectroscopy data is fit with an equivalent circuit model to determine resistance, capacitance, and activation energy for different grain morphologies. The copper phthalocyanine thin films are deposited via thermal evaporation on platinum interdigitated electrodes on glass substrates at different temperatures from 300 to 530 K with constant thickness of 22 nm. AC measurements, implementing a precision LCR meter are taken from 20Hz - 2 MHz, and at measurement temperatures from 25 - 90 °C. Stabilizing current by subjecting samples to 5 days in the dark, the impedance spectrum can be represented by Cole-Cole plots, which show either one or two peaks. The two maxima may be attributed to the crystalline bulk and grain boundaries of the film. We observe that the grain boundary resistance component changes by three orders of magnitude when varying the grain morphology, and the capacitance changes by one order of magnitude. The resistance of the grain boundary shows a minimum near the phase transition temperature of 450 K, followed by an increase in resistance for samples deposited at higher temperatures. The capacitance on the other hand, shows a maximum near the phase transition temperature. Similarly, the activation energy for the grain boundary peaks at 1.29 +/- 0.12 eV at the same phase-transition tempemture, whereas the crystalline bulk component has a constant activation energy of 0.36 +/- 0.08 eV for all sample of different grain sizes. Additional data taken using a perpendicular configuration for a 30 nm thick cobalt phthalocyanine thin film shows a double peak. The low temperature measurements for these samples are interpreted to have two contributions from micro-shorts and crystalline bulk.
机译:阻抗光谱法用于研究铜酞菁薄膜,以消除晶体的影响和不可避免的晶界。光谱数据与等效电路模型拟合,以确定不同晶粒形态的电阻,电容和活化能。铜酞菁薄膜通过热蒸发在300至530 K的不同温度下以22 nm的恒定厚度通过热蒸发沉积在玻璃基板上的铂指状电极上。使用精密LCR表的AC测量是在20Hz-2 MHz的温度和25-90°C的测量温度下进行的。通过在黑暗中放置样品5天来稳定电流,阻抗谱可以用Cole-Cole图表示,该图显示一个或两个峰值。这两个最大值可以归因于膜的晶体体积和晶界。我们观察到,当改变晶粒形态时,晶界电阻分量变化三个数量级,而电容变化一个数量级。晶界的电阻在450 K的相变温度附近显示出最小值,随后在较高温度下沉积的样品的电阻增加。另一方面,电容在相变温度附近显示最大值。类似地,在相同的相变温度下,晶界的活化能在1.29 +/- 0.12 eV处达到峰值,而对于不同晶粒尺寸的所有样品,结晶块状成分的活化能为0.36 +/- 0.08 eV。对于30 nm厚的钴酞菁薄膜,使用垂直配置获得的其他数据显示出一个双峰。这些样品的低温测量结果被认为是由微短裤和晶体体积造成的。

著录项

  • 作者

    Robinson, Kyle P.;

  • 作者单位

    California State University, Long Beach.;

  • 授予单位 California State University, Long Beach.;
  • 学科 Physics Condensed Matter.;Engineering Materials Science.
  • 学位 M.S.
  • 年度 2013
  • 页码 88 p.
  • 总页数 88
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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