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Design Techniques for Low-Power Multi-GS/s Analog-to-Digital Converters.

机译:低功耗Multi-GS / s模数转换器的设计技术。

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摘要

Ultra-high-speed (>10GS/s), medium-resolution (5~6bit), low-power (<50mW) analog-to-digital converter can find it application in the areas of digital oscilloscopes and next-generation serial link receivers. There are several challenges to enable a successful design, however. First, the time-interleaved architecture is required in order to achieve over 10GS/s sampling rate, with the trade-off of the number of the channels and the sampling rate in each channel. Phase misalignment and channel mismatch must be considered too. Second, timing accuracy, especially dynamic jitter of sampling clock becomes a major concern at ultra-high frequency, and certain techniques must be taken to address it. Finally, to achieve low power consumption, Flash architecture is not suitable to serve as the sub-ADC, and a low-power sub-ADC that can work at relatively high speed need to be designed.;A single channel, asynchronous successive approximation (SA) ADC with improved feedback delay has been fabricated in 40nm CMOS. Compared with a conventional SA structure that employs a single quantizer controlled by a digital feedback logic loop, the proposed SA-ADC employs multiple quantizers for each conversion bit, clocked by an asynchronous ripple clock that is generated after each quantization. Hence, the sampling rate of the 6-bit ADC is limited only by the six delays of the Capacitive-DAC settling and each comparator’s quantization delay, as the digital logic delay is eliminated. Measurement results of the 40nm-CMOS SA-ADC achieves peak SNDR of 32.9dB at 1GS/s and 30.5dB at 1.25GS/s, consuming 5.28mW and 6.08mW respectively, leading to FoM of 148fJ/conversion-step and 178fJ/conversion-step, in a core area less than 170µm by 85µm.;Based on the previous work of sub-ADC, a 12-GS/s 5-b 50-mW ADC is designed in 40nm CMOS with 8 time-interleaved channels of Flash-SA hybrid structure each running at 1.5GS/s. A modified bootstrapped switch is used in the track-and-hold circuit, introducing a global clock signal to synchronize the sampling instants of each individual channel, therefore improve the phase alignment and reduce distortion. The global clock is provided by a CML buffer which is injected by off-chip low-noise sine-wave signal, so that the RMS dynamic jitter is low for better ENOB performance. Measurement results show that the 12GS/s ADC can achieve a SNDR of 25.8dB with the input signal frequency around DC and 22.8dB around 2GHz, consuming 32.1mW, leading to FoM of 237.3fJ/conversion-step, in a core area less than 800µm by 500µm.
机译:超高速(> 10GS / s),中分辨率(5〜6bit),低功耗(<50mW)模数转换器可将其应用于数字示波器和下一代串行链路领域接收者。然而,要成功进行设计存在若干挑战。首先,需要时间交错架构,以实现超过10GS / s的采样率,同时要权衡通道数和每个通道中的采样率。也必须考虑相位失调和通道失配。第二,定时精度,特别是采样时钟的动态抖动成为超高频的主要问题,必须采取某些技术来解决。最后,为了实现低功耗,Flash架构不适合用作子ADC,因此需要设计一个可以以较高速度工作的低功率子ADC .;单通道异步逐次逼近( SA)具有改善的反馈延迟的ADC已在40nm CMOS中制造。与采用由数字反馈逻辑环路控制的单个量化器的常规SA结构相比,所提出的SA-ADC对每个转换位采用多个量化器,并由在每个量化之后生成的异步波纹时钟提供时钟。因此,由于消除了数字逻辑延迟,因此6位ADC的采样率仅受电容DAC建立的六个延迟以及每个比较器的量化延迟的限制。 40nm-CMOS SA-ADC的测量结果在1GS / s时达到32.9dB的峰值SNDR,在1.25GS / s时达到30.5dB的峰值,分别消耗5.28mW和6.08mW,从而使FoM为148fJ /转换步长和178fJ /转换分步,核心面积小于170μmx85μm;基于子ADC的先前工作,在40nm CMOS中设计了12-GS / s 5-b 50mW ADC,具有8个时间交错的Flash通道-SA混合结构,每个以1.5GS / s的速度运行。在跟踪和保持电路中使用了一种改进的自举开关,引入了全局时钟信号以同步每个单独通道的采样时刻,因此改善了相位对准并减少了失真。全局时钟由CML缓冲器提供,该CML缓冲器由片外低噪声正弦波信号注入,因此RMS动态抖动很低,从而具有更好的ENOB性能。测量结果表明,12GS / s ADC的SNDR为25.8dB,输入信号频率约为DC,而22.8dB约为2GHz,消耗32.1mW的功率,在核心区域小于23GHz时,FoM为237.3fJ /转换步长。 800微米乘500微米。

著录项

  • 作者

    Jiang, Tao.;

  • 作者单位

    Oregon State University.;

  • 授予单位 Oregon State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 113 p.
  • 总页数 113
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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