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MEMS-tunable vertical-cavity SOAs.

机译:MEMS可调垂直腔SOA。

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摘要

Vertical-cavity semiconductor optical amplifiers (VCSOAs) are attractive as a low-cost alternative to existing amplifier technologies for use in fiber-optic communication systems such as metro and access networks. In contrast with in-plane SOAs, the surface-normal operation of vertical-cavity SOAs gives rise to a number of advantages including a high coupling efficiency to optical fiber, polarization insensitive gain, the potential to fabricate high fill-factor two-dimensional arrays, and the ability to test devices on wafer.; Due to their narrow gain bandwidth, VCSOAs function as amplifying filters. In these devices the inherent spectral filtering of the high-finesse Fabry-Perot cavity leads to the elimination of out-of-band noise and results in channel-selective amplification. For multi-wavelength communications systems, it is of great interest to develop widely tunable VCSOAs that can be dynamically adjusted to match the signal wavelength. A promising approach to achieve wide wavelength tuning in VCSOAs is micromechanical, or MEMS-based tuning. Here, mechanical alteration of the effective cavity length gives rise to tuning ranges greater than those that can be achieved via refractive index modulation.; This dissertation outlines the development of three generations of MEMS-tunable VCSOAs (MT-VCSOAs), with the initial generation of devices being noteworthy as the first demonstration of a micromechanically-tunable VCSOA. In contrast with temperature tuning, the AlGaAs-based electrostatic actuator used in these devices allows for rapid, low power, and wide wavelength tuning. In the final generation, the MT-VCSOA utilizes a bottom-emitting configuration in which the MEMS-tuning element serves as the high-reflectivity back mirror. By suppressing the variation in reflectance with tuning, this configuration exhibits a two-fold increase in the effective tuning range as compared with the initial generation of devices---with a minimum of 5 dB fiber-to-fiber gain (12 dB on-chip gain) over a wavelength span of 21 nm, from 1557.4 nm to 1536.4 nm, while requiring a maximum tuning bias of 10.5 V (a five-fold reduction when compared with the first generation of MT-VCSOAs). Furthermore, these devices exhibit properties comparable to state-of-the-art fixed-wavelength VCSOAs, with a maximum fiber-coupled saturation output power of -1.4 dBm and an average gain bandwidth and noise figure of 65.2 GHz and 7.5 dB respectively.
机译:垂直腔半导体光放大器(VCSOA)作为低成本放大器的一种有吸引力的替代方法,可替代现有的放大器技术,用于光纤通信系统(如城域网和接入网)。与平面内SOA相比,垂直腔SOA的表面法向操作具有许多优点,包括与光纤的高耦合效率,偏振不敏感增益,制造高填充因子二维阵列的潜力,以及测试晶圆上器件的能力。由于其窄的增益带宽,VCSOA用作放大滤波器。在这些设备中,高精细的Fabry-Perot腔体固有的频谱过滤可消除带外噪声并导致通道选择性放大。对于多波长通信系统,开发可动态调整以匹配信号波长的可广泛调谐的VCSOA非常重要。在VCSOA中实现宽波长调谐的一种有前途的方法是微机械或基于MEMS的调谐。在这里,有效腔长度的机械改变引起的调谐范围大于通过折射率调制可以达到的调谐范围。本文概述了三代MEMS可调式VCSOAs(MT-VCSOA)的发展,值得注意的是第一代器件是微机械可调式VCSOA的首次演示。与温度调节相反,这些设备中使用的基于AlGaAs的静电致动器可实现快速,低功耗和宽波长调节。在最后一代中,MT-VCSOA采用了底部发射配置,其中MEMS调谐元件用作高反射率后视镜。通过抑制调谐时反射率的变化,与最初的设备相比,该配置的有效调谐范围增加了两倍-光纤到光纤的最小增益为5 dB(接通时为12 dB)芯片增益)在1557.4 nm至1536.4 nm的21 nm波长范围内,同时要求最大调谐偏置为10.5 V(与第一代MT-VCSOA相比降低了五倍)。此外,这些设备还具有可与最新固定波长VCSOA媲美的特性,最大光纤耦合饱和输出功率为-1.4 dBm,平均增益带宽和噪声系数分别为65.2 GHz和7.5 dB。

著录项

  • 作者

    Cole, Garrett D.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Physics Optics.; Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 232 p.
  • 总页数 232
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;无线电电子学、电信技术;工程材料学;
  • 关键词

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