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Broadband Low-Noise CMOS Mixers for Wireless Communications.

机译:用于无线通信的宽带低噪声CMOS混频器。

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摘要

In this thesis, three broadband low-noise mixing circuits which use CMOS 130 nm technology are presented. As one of the first few stages in a receiving front-end, stringent requirements are posted on mixer performance. The Gilbert cell mixers have presented excellent properties and achieved wide applications. However, the noise of a conventional active Gilbert cell mixer is high. This thesis demonstrates both passive and active mixing circuits with improved noise performance while maintaining the advantages of the Gilbert cell-based mixing core. Furthermore, wide bandwidth and variable gain are implemented, making the designed mixers multi-functional, yet with compact sizes and low power consumptions.;The second design is a broadband low-noise variable gain mixer which operates between 1 and 6 GHz. The transconductor stage is implemented with noise cancellation and current bleeding techniques. Series inductive peaking is used to extend the bandwidth. Gain variation is achieved by a current-steering IF stage. Measurements show a wide gain control range of 13 dB and a low noise performance over the entire frequency and gain range. The lowest DSB NF is 3.8 dB and the highest DSB NF is 14.2 dB.;The Third design is a broadband low-noise mixer with linear-in-dB gain control scheme. Using the same transconductance stage with the second circuit, this design also works from 1 to 6 GHz. A 10 dB linear-in-dB gain control range is achieved using an R-r load network with a linear-in-dB error less than +/- 0.5 dB. Low noise performance is achieved. For different frequencies and conversion gains, the lowest DSB NF is 3.8 dB and the highest DSB NF is 12 dB.;The first circuit is a passive 2x subharmonic mixer that works from 4.5 GHz to 8.5 GHz. The subharmonic mixing core is a two-stage passive Gilbert cell driven by a quadrature LO signal. Together with a noise-cancelling transconductor and an inverter-based TIA, this subharmonic mixer possesses an excellent broadband conversion gain and a low noise figure. Measurement results show a high conversion gain of 16 dB and a low average DSB NF of 9 dB.
机译:本文提出了三种采用CMOS 130 nm技术的宽带低噪声混频电路。作为接收前端的前几个阶段之一,对混频器性能提出了严格的要求。吉尔伯特(Gilbert)电池混合器具有出色的性能并获得了广泛的应用。但是,传统的有源吉尔伯特单元混合器的噪声很高。本文证明了无源和有源混合电路均具有改善的噪声性能,同时保持了吉尔伯特基于单元的混合核心的优势。此外,实现了宽带宽和可变增益,使设计的混频器具有多功能性,但具有紧凑的尺寸和低功耗。第二个设计是宽带低噪声可变增益混频器,其工作频率为1至6 GHz。跨导级通过噪声消除和电流抑制技术实现。串联电感峰值用于扩展带宽。增益变化是通过电流控制中频级实现的。测量表明,在整个频率和增益范围内,增益控制范围很宽,均为13 dB,而噪声性能却很低。最低的DSB NF为3.8 dB,最高的DSB NF为14.2 dB。;第三种设计是具有dB线性增益控制方案的宽带低噪声混频器。使用与第二个电路相同的跨导级,该设计还可以在1至6 GHz的频率下工作。使用R-r负载网络可实现10 dB的线性dB增益控制范围,线性误差小于+/- 0.5 dB。实现了低噪声性能。对于不同的频率和转换增益,最低DSB NF为3.8 dB,最高DSB NF为12 dB。第一个电路是工作在4.5 GHz至8.5 GHz范围内的无源2x次谐波混频器。次谐波混频核心是由正交LO信号驱动的两级无源吉尔伯特单元。结合降噪跨导器和基于逆变器的TIA,该次谐波混频器具有出色的宽带转换增益和低噪声系数。测量结果显示出16 dB的高转换增益和9 dB的低平均DSB NF。

著录项

  • 作者

    Jiang, Fan.;

  • 作者单位

    Queen's University (Canada).;

  • 授予单位 Queen's University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.A.Sc.
  • 年度 2013
  • 页码 136 p.
  • 总页数 136
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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