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Silicon-based passives for integrated microwave and infrared applications.

机译:用于集成微波和红外应用的硅基无源器件。

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摘要

An investigation of Si-based passive components in microwave and infrared frequencies has been undertaken. Coplanar wavegudies (CPWs) with electrodes in direct contact with moderately doped Si substrates were characterized at microwave frequencies. A new nonlinear circuit model applicable for CPW lines on both direct metal-semiconductor contacts and SiO2/Si MOS-like substrates has been developed and verified experimentally using bias-dependent s-parameter measurements from 100 MHz to 10 GHz. In contrast to conventional R-L-C-G models, the proposed model replicates dispersive effects due to finite substrate resistivity by including nonlinear frequency-independent junction capacitances and conductances. The modeled junction capacitances and conductances show excellent scalability with line geometry and substrate doping concentration. Capacitance-voltage and current-voltage measurements have been performed to investigate the model's substrate doping type dependence (both n- and p-type). Analysis of the model indicates that a full back-to-back metal-semiconductor junction contact model is required for CPWs on n-type substrates, while the higher Schottky barrier height of typical metal contacts to p-type Si permits a simpler one-sided junction model for CPWs on p-type substrates.;For infrared detector applications, dipole antennas backed by a dielectric-filled cavity were also explored to increase air-side directive gain for antenna-coupled diode detectors. The proposed antenna schemes are designed to be compatible with conventional IC fabrication processes. A parametric study of antenna design reveals that a 10 dB boresight gain can be achieved when the cavity dimensions are properly chosen to excite predominantly TE10 mode aperture fields. The dipole resonant frequency is found to decrease with increasing dipole length and its input impedance is sensitive to the dipole position within the cavity.;K-band scale models of the antenna were fabricated and measured at 28.3 GHz to conclusively evaluate the performance of the antenna designs. The antennas demonstrated 10 dB directivity and --25 dB cross-polarization at boresight. The cross-polarization was limited by the dipole feed and misalignment. Measured antenna radiation efficiency was better than 70% throughout the interested frequency range. The power loss was attributed to filling dielectric and metallic sidewall loss. The measured s-parameters and radiation pattern showed good match to 3-dimensional electromagnetic simulations using HFSS.
机译:已经对微波和红外频率中的硅基无源元件进行了研究。在微波频率下表征了共平面波导管(CPW),其电极与中等掺杂的Si基板直接接触。已经开发了一种适用于直接金属-半导体接触和类似SiO2 / Si MOS衬底上的CPW线的新型非线性电路模型,并使用从100 MHz至10 GHz的偏置相关s参数测量进行了实验验证。与常规的R-L-C-G模型相反,该模型通过包括非线性频率无关的结电容和电导来复制由于有限的基板电阻率而产生的色散效应。建模的结电容和电导率随线的几何形状和衬底掺杂浓度表现出出色的可扩展性。已经进行了电容电压和电流电压测量,以研究模型的衬底掺杂类型依赖性(n型和p型)。对模型的分析表明,n型衬底上的CPW需要完整的背对背金属-半导体结接触模型,而典型的金属接触到p型Si的肖特基势垒高度较高,这使得单面更简单p型衬底上CPW的结模型。对于红外探测器应用,还研究了由电介质填充腔支持的偶极子天线,以增加天线耦合二极管探测器的空中方向增益。提出的天线方案设计为与常规IC制造工艺兼容。对天线设计的参数研究表明,如果正确选择腔尺寸以激发TE10模式孔径场,则可以实现10 dB的视轴增益。发现偶极子谐振频率随偶极子长度的增加而降低,并且其输入阻抗对谐振腔内偶极子位置敏感。制作了天线的K波段比例模型,并在28.3 GHz进行了测量,以最终评估天线的性能设计。天线在视轴上显示出10 dB的方向性和-25 dB的交叉极化。交叉极化受到偶极子馈入和未对准的限制。在感兴趣的频率范围内,测得的天线辐射效率优于70%。功率损耗归因于填充电介质和金属侧壁损耗。测得的s参数和辐射方向图与使用HFSS的3维电磁仿真显示出良好的匹配性。

著录项

  • 作者

    Sun, Zhuowen.;

  • 作者单位

    University of Notre Dame.;

  • 授予单位 University of Notre Dame.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 134 p.
  • 总页数 134
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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