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Electronic transitions and multiferroicity in transition metal oxides.

机译:过渡金属氧化物中的电子跃迁和多铁性。

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摘要

Four systems have been studied for the localized-itinerant electronic transition in transition-metal oxides: (i) In CaV1- xTixO3, substitution of Ti(IV) introduces Anderson-localized states below a mobility edge mu c that increases with x, crossing epsilon F in the range 0.2 x 0.4 and also transforms the strong-correlation fluctuations to localized V(IV): t1e0 configurations for x ≥ 0.1. (ii) The properties of LaTiO3+delta reveal that a hole-poor, strongly correlated electronic phase coexists with a hole-rich, itinerant-electron phase. With delta ≥ 0.03, the hole-rich phase exists as a minority phase of isolated, mobile itinerant-electron clusters embedded in the hole-poor phase. With delta ≥ 0.08, isolated hole-poor clusters are embedded in an itinerant-electron matrix. As delta > 0.08 increases, the hole-poor clusters become smaller and more isolated until they are reduced to super-paramagnetic strong-correlation fluctuations by delta = 0.12. (iii) The data of Y1-xLaxTiO 3 appears to distinguish an itinerant-electron antiferromagnetic phase in the La-rich samples from a localized-electron ferromagnetic phase with a cooperative Jahn-Teller distortion in the Y-rich phase. (iv) The transition at Tt in Mg[Ti2]O4 is a semiconductor-semiconductor transition associated with Ti-Ti dimerization instabilities. The dimerization is caused by lattice instabilities resulting from a double-well Ti-Ti bond potential at a crossover from localized to itinerant electronic behavior.; RMn1-xGaxO 3 (R = Ho, Y) and Ho1-xY xMnO3 have been studied for the multiferroicity of RMnO3. Ga doping raises the ferrielectric Curie temperature TC and the Mn-spin reorientation temperature TSR while lowering TN of the Mn spins and the Ho magnetic ordering temperature T 2. The data show an important coupling between the Mn3+-ion and HO3+-ion spins as well as a TSR that is driven by a cooperative MnO5 site rotation and R 3+-ion displacements that modify the c lattice parameter. The data also support an enhanced spin-lattice interaction in the geometrically frustrated (GF) Mn-spin system. Y doping enhances the temperature region for the P6'3cm' magnetic phase and thereby increases TSR for Ho1-xY xMnO3.; The studies of several oxygen non-stoichiometric Fe4+/Fe 3+ oxoperovskite show that two mechanisms, the formation of Fe 3+-O-Fe4+ pair and the disproportionation reaction 2Fe(IV)O6/2 = Fe3+ + Fe(V)O6, dominate the electronic behavior. The properties of DyBaCo2O5.5 reveal a spin-state transition from the low-spin t 6e0 ground state to higher spin-state at octahedral-site Co3+, which is also accounted for the metamagnetism in the sample.
机译:对于过渡金属氧化物中的局部巡回电子跃迁,已经研究了四个系统:(i)在CaV1-xTixO3中,Ti(IV)的取代在迁移率边沿muc下方引入安德森局部化态,其随x增大,穿过ε F在0.2 0.08的增加,空穴匮乏的簇变得更小并且更孤立,直到它们减少为δ= 0.12的超顺磁强相关波动。 (iii)Y1-xLaxTiO 3的数据似乎可以将富La样品中的流动电子反铁磁相与局域电子铁磁相区分开,并且富Y相具有协同的Jahn-Teller畸变。 (iv)Mg [Ti2] O4中Tt处的跃迁是与Ti-Ti二聚化不稳定性相关的半导体-半导体跃迁。二聚化是由晶格不稳定性引起的,该晶格不稳定性是在从局部电子行为向迭代电子行为的交叉处的双阱Ti-Ti键势引起的。对于RMnO3的多铁性,已经研究了RMn1-xGaxO 3(R = Ho,Y)和Ho1-xY xMnO3。 Ga掺杂提高了铁电居里温度TC和Mn自旋取向温度TSR,同时降低了Mn自旋的TN和Ho磁有序温度T 2。数据表明,Mn3 +离子和HO3 +离子自旋之间也具有重要的耦合作用。 TSR是由MnO5协同旋转和R 3+离子位移共同驱动,从而改变c晶格参数。数据还支持几何受挫(GF)Mn自旋系统中增强的自旋-晶格相互作用。 Y掺杂增强了P6'3cm'磁性相的温度范围,从而增加了Ho1-xY xMnO3的TSR。对几种非化学计量的氧气Fe4 + / Fe 3+氧杂钙钛矿的研究表明,有两种机理,Fe 3 + -O-Fe4 +对的形成和歧化反应2Fe(IV)O6 / 2 = Fe3 + + Fe(V)O6,主导电子行为。 DyBaCo2O5.5的性质揭示了在八面体位点Co3 +处从低自旋t 6e0基态到高自旋态的自旋态跃迁,这也解释了样品中的超磁性。

著录项

  • 作者

    Zhou, Haidong.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Physics Condensed Matter.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 204 p.
  • 总页数 204
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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