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Growth of carbon nanotubes on metallic substrates and study of their interfacial transport properties.

机译:碳纳米管在金属基底上的生长及其界面传输性能的研究。

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摘要

The goal of this work was to identify suitable metal/alloys on which multiwalled nanotubes (MWNTs) can be grown directly. This thesis discusses the growth of carbon nanotubes (CNTs) on metallic substrates by using vapor-phase catalyst delivery in a chemical vapor deposition (CVD) technique. The major restriction for the growth of CNTs is that the growth is carried out mainly on non-conducting substrates, which causes major limitations to various nanotube based electronics applications where one end should be electrically conducting.; Growing CNTs directly on to metal helps in to eliminate various issues related to integrating CNTs with device such as defining electrical contacts, scalability, site selective growth and the flexibility of the substrate to have desirable geometrical shape and configuration. Thus, the present work will focus on the following aspects of MWNT-metal based architectures, namely: (1) The study of the fundamental aspect of direct growth of CNTs on metal substrates and to explore other conducting substrate material for the growth of CNTs. (2) The study of growth kinetics, the growth mechanism of CNTs on these conducting substrates, and the interaction of the catalyst with these substrates. (3) Characterization of interfacial contact resistance (electrical and thermal), between the nanotubes and the substrate which is a bottleneck for electrical and thermal transport and has application in nanoelectronics, thermal management etc. (4) Explore the applications of CNT-metal based systems involving field-emitter devices and supercapacitors, where the CNTs are well anchored to the Inconel substrate and thus show low contact resistance.
机译:这项工作的目标是确定可以在其上直接生长多壁纳米管(MWNT)的合适金属/合金。本文讨论了在化学气相沉积(CVD)技术中使用气相催化剂输送金属基底上的碳纳米管(CNTs)的方法。 CNT生长的主要限制是该生长主要在不导电的基底上进行,这对其中一端应导电的各种基于纳米管的电子应用造成了主要限制。直接在金属上生长CNT有助于消除与将CNT与设备集成在一起有关的各种问题,例如定义电接触,可伸缩性,位置选择性生长以及基板的柔韧性以具有所需的几何形状和配置。因此,当前的工作将集中在基于MWNT-金属的体系结构的以下方面,即:(1)研究在金属衬底上直接生长CNT的基本方面,并探索用于CNT生长的其他导电衬底材料。 (2)研究生长动力学,碳纳米管在这些导电基底上的生长机理以及催化剂与这些基底的相互作用。 (3)表征纳米管与基板之间的界面接触电阻(电和热),这是电和热传输的瓶颈,已在纳米电子学,热管理等领域得到应用。(4)探索基于CNT-金属的应用涉及场发射器器件和超级电容器的系统,其中CNT很好地固定在Inconel基板上,因此显示出较低的接触电阻。

著录项

  • 作者

    Pal, Sunil K.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Engineering Mechanical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 169 p.
  • 总页数 169
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 机械、仪表工业;工程材料学;
  • 关键词

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